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MEMORY MODULE SRAM 512Kx8-SOP

Static Ram MODULE

3D SR4M08VS1264

4 Mbit SRAM organized as 512Kx8

Pin Assignment (Top View)

SOP 44 (Pitch : 0.80 mm)

Features

- Fast Access Time : 12, 15 or 20ns. - Organized as 512K x 32-bit based on 512K x 8-bit - Single +3.3 ± 0.3V power supply - TTL Compatible Input and Outputs. - Fully Static Operation No clock or refresh required - Three state Outputs. - Center Power/Ground Pin Configuration - Available Temperature Range: - 0°C to 70°C -40°C to+85°C -55°C to +125°C - Available with screening option for high reliability application (Space, etc...)

General Description

The 3D SR4M08VS1264 is a high-speed highly integrated Static Random Access Memory containing 4,19,304 bit. It is organized as a 8-bit bank with a #CS. The 3D SR4M08VS1264 uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is manufactured using 3D-PLUS well known MCM-V patented technology designed for high speed circuit applications. It is particularity well suited for use in high reliability, high performance and high density system applications, such as solid state mass recorder, server or workstation. The 3D SR4M08VS1264 is packaged in a 44 pin SOP.

SRAM Memory Module

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22

NC NC A0 A1 A2 A3 A4 #CS I/O1 I/O2 VCC VSS I/O3 I/O4 #WE A5 A6 A7 A8 A9 NC NC

23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44

NC NC NC A10 A11 A12 A13 A14 I/O5 I/O6 VCC VSS I/O7 I/O8 #OE A15 A16 A17 A18 NC NC NC

FUNCTIONAL BLOCK DIAGRAM

512Kx8

CLAUDIA / MMSR08510801S-C

3D Plus SA reserves the right to cancel product or specifications without notice 3DFP-0264-REV 3-DEC. 2008

MEMORY MODULE SRAM 512Kx8-SOP

Static Ram MODULE

Mechanical Drawing

3D SR4M08VS1264

4 Mbit SRAM organized as 512Kx8

A A2 D E E1 b e

Min 3.45 2.20 19.80 13.40 10.85 0.35 0.8 Dimension (mm) Max. weight : 2.4gr.

Max 4.05 2.80 20.20 13.80 11.05

DC OPERATING CONDITIONS

Parameter

Supply Voltage Ground Input High Voltage Input Low Voltage Output High Voltage Output Low Voltage Note :

Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability

ABSOLUTE MAXIMUM RATINGS

Min

3.0 0 2.0 -0.3 2.4 -

Symbol

VCC VSS VIH VIL VOH VOL

Max

3.6 0 VCC+0.3 0.8 0.4

Unit

V V V V V

Parameter

Voltage on any pin relative to VSS Storage temperature Power dissipation

Symbol

VT TSTG PD

Value

-0.5 to +4.6 -65 to +150 4.1

Unit

V °C W

DC Characteristics @ 20MHz

Parameter

Operating Current (One bank active) TTL Standby Current CMOS Standby Current (with threshold drain)

Symbol Value

ICC ISB ISB1 190 70 20

Unit

mA mA mA

3D SR4M08VS1264

Temperature Range C = (0°C ~ +70°C) I = (-40°C ~ +85°C)

X

X

M =(-55°C ~+125°C) S = Specific

Quality Level N = Commercial Grade B = Industrial Grade S = Space Grade C = Custom Main Sales Office FRANCE

3D PLUS 641, rue Hélène Boucher ZI. 78532 BUC Cedex 3D PLUS USA, Inc 2570 Eldorado Parkway Suite 150 Mckinney, TX 75070 Tel : 33 (0)1 30 83 26 50 Fax : 33 (0)1 39 56 25 89 Web : www.3d-plus.com e-mail : [email protected] e-mail : [email protected] DISTRIBUTOR

USA

Tel : (241) 733-8505

Tel : (241) 733-8506

SRAM Memory Module

CLAUDIA / MMSR08510801S-C

3D Plus SA reserves the right to cancel product or specifications without notice 3DFP-0264-REV 3-DEC. 2008

Information

Microsoft Word - 3DFP-0264-3

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Microsoft Word - 3DFP-0264-3