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AP60T03GS/P

Pb Free Plating Product

Advanced Power Electronics Corp.

Simple Drive Requirement Low Gate Charge Fast Switching Speed RoHS Compliant G S D

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

BVDSS RDS(ON) ID

30V 12m 45A

Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP60T03GP) are available for low-profile applications.

TO-263(S)

TO-220(P)

Absolute Maximum Ratings

Symbol VDS VGS [email protected]=25 [email protected]=100 IDM [email protected]=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current

1

Rating 30 ±20 45 32 120 44 0.352 -55 to 175 -55 to 175

Units V V A A A W W/

Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range

Thermal Data

Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 3.4 62 Units /W /W

Data and specifications subject to change without notice

200411052-1/4

AP60T03GS/P

Electrical [email protected]=25oC(unless otherwise specified)

Symbol BVDSS BVDSS/Tj RDS(ON) Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA

2

Min. 30 1 -

Typ. 0.03 25 11.6 3.9 7 8.8 57.5 18.5 6.4 200 135

Max. Units 12 25 3 1 250 ±100 19 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF

Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA

Static Drain-Source On-Resistance

VGS=10V, ID=20A VGS=4.5V, ID=15A

VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss

Gate Threshold Voltage Forward Transconductance

2

o

VDS=VGS, ID=250uA VDS=10V, ID=10A VDS=30V, VGS=0V VDS=24V ,VGS=0V VGS= ±20V ID=20A VDS=24V VGS=4.5V VDS=15V ID=20A RG=3.3,VGS=10V RD=0.75 VGS=0V VDS=25V f=1.0MHz

o

Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=175 C)

Gate-Source Leakage Total Gate Charge

2

Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance

2

1135 1816

Source-Drain Diode

Symbol VSD trr Qrr Parameter Forward On Voltage

2 2

Test Conditions IS=45A, VGS=0V IS=20A, VGS=0V, dI/dt=100A/µs

Min. -

Typ. 23.3 16

Max. Units 1.3 V ns nC

Reverse Recovery Time

Reverse Recovery Charge

Notes:

1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%.

2/4

AP60T03GS/P

125 90

100

T C =25 o C

10V 8.0V ID , Drain Current (A)

T C =175 C

o

10V 8.0V 6.0V

ID , Drain Current (A)

6.0V

75

60

5.0V

30

5.0V

50

25

V G =4.0V

V G =4.0V

0

0 0 1 2 3 4

0

1

2

3

4

5

V DS , Drain-to-Source Voltage (V)

V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

80

2

I D =15A T C =25

60 1.6

I D =20A V G =10V Normalized R DS(ON)

RDS(ON) (m )

40

1.2

20

0.8

0 2 4 6 8 10

0.4 -50 25 100 175

V GS , Gate-to-Source Voltage (V)

T j , Junction Temperature ( C)

o

Fig 3. On-Resistance v.s. Gate Voltage

Fig 4. Normalized On-Resistance v.s. Junction Temperature

3

100

10

2

1

VGS(th) (V)

1 0 1.5 -50

T j =175 o C IS(A)

T j =25 o C

0.1 0 0.5 1

25

100

175

V SD , Source-to-Drain Voltage (V)

T j , Junction Temperature ( o C )

Fig 5. Forward Characteristic of

Reverse Diode

Fig 6. Gate Threshold Voltage v.s. Junction Temperature

AP60T03GS/P

f=1.0MHz

12

10000

I D =20A VGS , Gate to Source Voltage (V)

9

C (pF)

V DS =16V V DS =20V V DS =24V

C iss

6

1000

3

C oss C rss

0 0 6 12 18 24

100

1

8

15

22

29

Q G , Total Gate Charge (nC)

V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

1000

1

Normalized Thermal Response (Rthjc)

Duty factor = 0.5

100

0.2

0.1

ID (A)

100us

10

0.1

0.05

PDM

0.02

t T

Duty Factor = t/T Peak Tj = PDM x Rthjc + T C

1ms 10ms 100ms DC

0.01 Single Pulse

1 0.1 1 10 100

0.01 0.00001 0.0001 0.001 0.01 0.1 1

V DS , Drain-to-Source Voltage (V)

t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

VDS 90%

VG QG 4.5V QGS QGD

10% VGS td(on) tr td(off) tf Charge Q

Fig 11. Switching Time Waveform

Fig 12. Gate Charge Waveform

4/4

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