Read BLF6G27-45; BLF6G27S-45 WiMAX power LDMOS transistor text version

BLF6G27-45; BLF6G27S-45

WiMAX power LDMOS transistor

Rev. 03 -- 15 December 2008 Product data sheet

1. Product profile

1.1 General description

45 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.

Table 1. Typical performance RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 1-carrier N-CDMA[1]

[1] [2]

f (MHz) 2500 to 2700

VDS (V) 28

PL(AV) (W) 7

Gp (dB) 18

D (%) 24

ACPR885k (dBc) -49[2]

ACPR1980k (dBc) -64[2]

Single carrier N-CDMA with pilot, paging sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz. Measured within 30 kHz bandwidth.

CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.

1.2 Features

I Typical 1-carrier N-CDMA performance (single carrier N-CDMA with pilot, paging, sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz), a supply voltage of 28 V and an IDq of 350 mA: I Qualified up to a maximum VDS operation of 32 V I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation I Internally matched for ease of use I Low gold plating thickness on leads I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

NXP Semiconductors

BLF6G27-45; BLF6G27S-45

WiMAX power LDMOS transistor

1.3 Applications

I RF power amplifiers for base stations and multi carrier applications in the 2500 MHz to 2700 MHz frequency range

2. Pinning information

Table 2. Pin 1 2 3 Pinning Description drain gate source

[1]

Simplified outline

Graphic symbol

BLF6G27-45 (SOT608A)

1 1

3 2

2 3

sym112

BLF6G27S-45 (SOT608B) 1 2 3 drain gate source

[1]

1 3 2 2

1

3

sym112

[1]

Connected to flange.

3. Ordering information

Table 3. Ordering information Package Name BLF6G27-45 BLF6G27S-45 Description flanged ceramic package; 2 mounting holes; 2 leads ceramic earless flanged package; 2 leads Version SOT608A SOT608B Type number

4. Limiting values

Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions Min -0.5 -65 Max 65 +13 20 +150 200 Unit V V A °C °C

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WiMAX power LDMOS transistor

5. Thermal characteristics

Table 5. Symbol Rth(j-case) Thermal characteristics Parameter Conditions Type Typ 1.7 1.7 Unit K/W K/W thermal resistance from Tcase = 80 °C; BLF6G27-45 junction to case PL = 34 W (CW) BLF6G27S-45

6. Characteristics

Table 6. Characteristics Tj = 25 °C per section; unless otherwise specified. Symbol Parameter V(BR)DSS drain-source breakdown voltage VGS(th) IDSS IDSX IGSS gfs RDS(on) Crs gate-source threshold voltage drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance feedback capacitance Conditions VGS = 0 V; ID = 0.5 mA VDS = 10 V; ID = 60 mA VGS = 0 V; VDS = 28 V VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = 11 V; VDS = 0 V VDS = 10 V; ID = 2.5 A VGS = VGS(th) + 3.75 V; ID = 2.1 A VGS = 0 V; VDS = 28 V; f = 1 MHz Min 65 1.4 8.8 Typ 1.9 10.4 4.3 0.24 1.1 Max 2.4 1.4 140 Unit V V µA A nA S

0.385 pF

7. Application information

Table 7. Application information Mode of operation: Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR 9.7 dB at 0.01 % probability on CCDF; channel bandwidth = 1.23 MHz; f = 2700 MHz; RF performance at VDS = 28 V; IDq = 350 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production circuit. Symbol PL(AV) Gp RLin D ACPR885k Parameter average output power power gain input return loss drain efficiency adjacent channel power ratio (885 kHz) PL(AV) = 7 W PL(AV) = 7 W PL(AV) = 7 W PL(AV) = 7 W PL(AV) = 7 W

[1] [1]

Conditions

Min 22 -

Typ Max Unit 7 W dB dB % dBc dBc

16.5 18 24

-10 -5 -49 -46 -64 -61

ACPR1980k adjacent channel power ratio (1980 kHz)

[1] Measured within 30 kHz bandwidth.

7.1 Ruggedness in class-AB operation

The BLF6G27-45 and BLF6G27S-45 are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 350 mA; PL = 45 W (CW); f = 2600 MHz.

BLF6G27-45_BLF6G27S-45_3 © NXP B.V. 2008. All rights reserved.

Product data sheet

Rev. 03 -- 15 December 2008

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NXP Semiconductors

BLF6G27-45; BLF6G27S-45

WiMAX power LDMOS transistor

7.2 Single carrier N-CDMA performance

22 Gp (dB) 20 Gp 18 30

001aah406

50 D (%) 40

-30 ACPR (dBc) -40

(1) (2) (1) (2)

001aah407

-50

16 D 14

20

-60

ACPR885k

(2) (1)

10

-70

ACPR1500k

12 10-1

1

10 PL(AV) (W)

102

0

ACPR1980k -80 10-1

1

10 PL(AV) (W)

102

VDS = 28 V; IDq = 350 mA; f = 2600 MHz; single carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; channel bandwidth = 1.23 MHz; instantaneous bandwidth = 30 kHz.

VDS = 28 V; IDq = 350 mA; f = 2600 MHz; single carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; channel bandwidth = 1.23 MHz; instantaneous bandwidth = 30 kHz. (1) Low frequency component (2) High frequency component

Fig 1.

Power gain and drain efficiency as functions of average load power; typical values

Fig 2.

Adjacent channel power ratio as function of average load power; typical values

BLF6G27-45_BLF6G27S-45_3

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Product data sheet

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NXP Semiconductors

BLF6G27-45; BLF6G27S-45

WiMAX power LDMOS transistor

7.3 Two-tone

19.5 Gp (dB) 18.5

(3)

001aah408

-15 IMD3 (dBc) -25

001aah409

(5) (4)

-35

(2)

-45

17.5

(1)

-55

(1) (2) (5) (3) (4)

16.5 1 10 PL(PEP) (W)

102

-65 1 10 PL(PEP) (W)

102

VDS = 28 V; f1 = 2598.75 MHz; f2 = 2601.25 MHz; 2.5 MHz tone spacing. (1) IDq = 250 mA (2) IDq = 300 mA (3) IDq = 350 mA (4) IDq = 400 mA (5) IDq = 500 mA

VDS = 28 V; f1 = 2598.75 MHz; f2 = 2601.25 MHz; 2.5 MHz tone spacing. (1) IDq = 250 mA (2) IDq = 300 mA (3) IDq = 350 mA (4) IDq = 400 mA (5) IDq = 500 mA

Fig 3.

Power gain as function of peak envelope load power; typical values

Fig 4.

Third order intermodulation distortion as function of peak envelope load power; typical values

BLF6G27-45_BLF6G27S-45_3

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BLF6G27-45; BLF6G27S-45

WiMAX power LDMOS transistor

7.4 Continuous wave

20 Gp (dB) 16 D

(3)

001aah410

60 D (%) 40

20 Gp (dB) 16

001aah411

Gp

(1) (2)

12

20

12

(5)

(4)

8 1 10 PL (W)

102

0

8 1 10

(6)

102 PL(CW) (W)

IDq = 350 mA; f = 2600 MHz; Tcase = 25 °C; VDS = 28 V.

IDq = 350 mA; f = 2600 MHz; Tcase = 25 °C. (1) VDS = 32 V (2) VDS = 28 V (3) VDS = 24 V (4) VDS = 20 V (5) VDS = 16 V (6) VDS = 12 V

Fig 5.

Power gain and drain efficiency as functions of CW load power; typical values

Fig 6.

Power gain as function of CW load power; typical values

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Product data sheet

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BLF6G27-45; BLF6G27S-45

WiMAX power LDMOS transistor

7.5 Single carrier N-CDMA broadband performance at 7 W average

19 Gp (dB) 18 Gp

001aah412

27 D (%) 26

-40 ACPR (dBc) -50

(1) (2)

001aah413

ACPR885k

17

25

(1) (2)

16

D

24 -60

(1) (2)

ACPR1500k

15

23

ACPR1980k

14 2500

2550

2600

2650 f (MHz)

22 2700

-70 2500

2550

2600

2650 f (MHz)

2700

VDS = 28 V; IDq = 350 mA; single carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; instantaneous bandwidth = 30 kHz.

VDS = 28 V; IDq = 350 mA; single carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; instantaneous bandwidth = 30 kHz. (1) Low frequency component (2) High frequency component

Fig 7.

Power gain and drain efficiency as functions of frequency; typical values

19 Gp (dB) 18

Fig 8.

Adjacent channel power ratio as function of frequency; typical values

001aah417

0 RLin (dB) -4

Gp

17

-8

RLin 16 -12

15 2500

2550

2600

2650 f (MHz)

-16 2700

VDS = 28 V; IDq = 350 mA; single carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; instantaneous bandwidth = 30 kHz.

Fig 9.

Power gain and input return loss as functions of frequency

BLF6G27-45_BLF6G27S-45_3

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Product data sheet

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NXP Semiconductors

BLF6G27-45; BLF6G27S-45

WiMAX power LDMOS transistor

7.6 Single carrier N-CDMA broadband performance at 20 W average

18 Gp (dB) 17 Gp

001aah414

45 D (%) 43

-30 ACPR (dBc) -40

(1) (2)

001aah415

ACPR885k

16

D

41

(1) (2)

ACPR1500k

15

39 -50

(1) (2)

14

37

ACPR1980k

13 2500

2550

2600

2650 f (MHz)

35 2700

-60 2500

2550

2600

2650 f (MHz)

2700

VDS = 28 V; IDq = 350 mA; single carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; instantaneous bandwidth = 30 kHz.

VDS = 28 V; IDq = 350 mA; single carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; instantaneous bandwidth = 30 kHz. (1) Low frequency component (2) High frequency component

Fig 10. Power gain and drain efficiency as functions of frequency; typical values

Fig 11. Adjacent channel power ratio as function of frequency; typical values

BLF6G27-45_BLF6G27S-45_3

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Product data sheet

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BLF6G27-45; BLF6G27S-45

WiMAX power LDMOS transistor

8. Test information

C10 C4

C11 L1 R2

VDD +28 V

C14

VGG

C6 C5

C7

R1 C9 Q1 C3

50 output

50 input

C1

C2 C8

C12

C13

001aah416

See Table 8 for list of components.

Fig 12. Test circuit for operation at 2500 MHz to 2700 MHz

BLF6G27-45_BLF6G27S-45_3

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Product data sheet

Rev. 03 -- 15 December 2008

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NXP Semiconductors

BLF6G27-45; BLF6G27S-45

WiMAX power LDMOS transistor

VGG

short (0 )

C14 C6

VDD

R2 C4 C5 C7 Q1 R1 C10 C11 L1

C3 C1 C2

C9

C8

C12

C13

BLF6G27-45 Input-Rev3

BLF6G27-45 Output-Rev3

001aah418

Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with r = 3.5 and thickness = 0.76 mm. See Table 8 for list of components.

Fig 13. Component layout for 2500 MHz to 2700 MHz test circuit Table 8. List of components For test circuit, see Figure 12 and Figure 13. Component C1 C2 C3, C4, C7, C8 C6 C9 C14 L1 R1 R2 Q1

[1]

Description multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor tantalum capacitor multilayer ceramic chip capacitor electrolytic capacitor ferrite SMD bead resistor resistor BLF6G27-45 or BLF6G27S-45

Value 0.3 pF 0.5 pF 11 pF 4.7 µF 10 µF; 35 V 8.2 pF 470 µF; 63 V 22 12 [1] [1] [1]

Remarks

C5, C10, C11, C12, C13 multilayer ceramic chip capacitor

C4532X7R1H475M Kemet (Farnell)

Ferroxcube BDS 3/3/4.6-4S2 or equivalent package 0603 package 1206

American Technical Ceramics type 100B or capacitor of same quality.

BLF6G27-45_BLF6G27S-45_3

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Product data sheet

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NXP Semiconductors

BLF6G27-45; BLF6G27S-45

WiMAX power LDMOS transistor

Measured test circuit impedances Zi () 11.1 - j11.0 10.6 - j10.8 10.1 - j10.5 9.6 - j10.2 9.1 - j9.8 Zo () 18.4 - j9.1 16.9 - j9.2 15.6 - j9.2 14.4 - j9.1 13.3 - j8.9

Table 9. f (GHz) 2.50 2.55 2.60 2.65 2.70

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Product data sheet

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WiMAX power LDMOS transistor

9. Package outline

Flanged ceramic package; 2 mounting holes; 2 leads SOT608A

D

A F

3

D1

U1 q C

B c

1

H

U2

p

E1

E

w1 M A M B M

A b

2

w2 M C M Q 0 5 scale 10 mm

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.62 3.76 0.182 0.148 b 7.24 6.99 c 0.15 0.10 D D1 E E1 F 1.14 0.89 H 15.75 14.73 p 3.30 2.92 0.130 0.115 Q 1.70 1.35 q 15.24 U1 20.45 20.19 0.805 0.795 U2 9.91 9.65 w1 0.25 w2 0.51

10.21 10.29 10.01 10.03 0.402 0.405 0.394 0.395

10.21 10.29 10.01 10.03 0.402 0.405 0.394 0.395

0.285 0.006 0.275 0.004

0.045 0.620 0.035 0.580

0.067 0.600 0.053

0.390 0.010 0.020 0.380

OUTLINE VERSION SOT608A

REFERENCES IEC JEDEC EIAJ

EUROPEAN PROJECTION

ISSUE DATE 01-02-22 02-02-11

Fig 14. Package outline SOT608A

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Product data sheet

Rev. 03 -- 15 December 2008

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NXP Semiconductors

BLF6G27-45; BLF6G27S-45

WiMAX power LDMOS transistor

Ceramic earless flanged package; 2 leads

SOT608B

D

A F

3

D1 U1

A

c

1

H

U2 E1

E

2

b

w1

M

A

M

Q

0 scale

5 mm

DIMENSIONS (mm dimensions are derived from the original inch dimensions) UNIT mm inch A 4.62 3.76 b 7.24 6.99 c 0.15 0.10 D D1 E E1 F 1.14 0.89 H 15.75 14.73 Q 1.70 1.35 U1 U2 w1 0.51

10.21 10.29 10.21 10.29 10.01 10.03 10.01 10.03

10.24 10.24 9.98 9.98

0.182 0.285 0.006 0.402 0.405 0.402 0.405 0.045 0.620 0.067 0.403 0.403 0.020 0.148 0.275 0.004 0.394 0.395 0.394 0.395 0.035 0.580 0.053 0.393 0.393 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION

OUTLINE VERSION SOT608B

ISSUE DATE 06-11-27 06-12-06

Fig 15. Package outline SOT608B

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Product data sheet

Rev. 03 -- 15 December 2008

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NXP Semiconductors

BLF6G27-45; BLF6G27S-45

WiMAX power LDMOS transistor

10. Abbreviations

Table 10. Acronym CCDF CW LDMOS N-CDMA PAR RF SMD VSWR WiMAX Abbreviations Description Complementary Cumulative Distribution Function Continuous Wave Laterally Diffused Metal-Oxide Semiconductor Narrowband Code Division Multiple Access Peak-to-Average power Ratio Radio Frequency Surface Mounted Device Voltage Standing-Wave Ratio Worldwide Interoperability for Microwave Access

11. Revision history

Table 11. Revision history Release date Data sheet status Product data sheet Change notice Supersedes BLF6G27-45_BLF6G27S-45_2 BLF6G27-45_BLF6G27S-45_1 Document ID Modifications:

BLF6G27-45_BLF6G27S-45_3 20081215

·

Changed the maximum junction temperature in Table 4 on page 2. Preliminary data sheet Preliminary data sheet -

BLF6G27-45_BLF6G27S-45_2 20080207 BLF6G27-45_BLF6G27S-45_1 20080129

BLF6G27-45_BLF6G27S-45_3

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Product data sheet

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BLF6G27-45; BLF6G27S-45

WiMAX power LDMOS transistor

12. Legal information

12.1 Data sheet status

Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet

[1] [2] [3]

Product status[3] Development Qualification Production

Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.

Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.

12.2 Definitions

Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

12.3 Disclaimers

General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or

12.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.

13. Contact information

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected]

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Product data sheet

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BLF6G27-45; BLF6G27S-45

WiMAX power LDMOS transistor

14. Contents

1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 7.5 7.6 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 3 Single carrier N-CDMA performance . . . . . . . . 4 Two-tone . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Continuous wave . . . . . . . . . . . . . . . . . . . . . . . 6 Single carrier N-CDMA broadband per formance at 7 W average . . . . . . . . . . . . . . . . . 7 Single carrier N-CDMA broadband performance at 20 W average . . . . . . . . . . . . . 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14 Legal information. . . . . . . . . . . . . . . . . . . . . . . 15 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Contact information. . . . . . . . . . . . . . . . . . . . . 15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.

© NXP B.V. 2008.

All rights reserved.

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 15 December 2008 Document identifier: BLF6G27-45_BLF6G27S-45_3

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BLF6G27-45; BLF6G27S-45 WiMAX power LDMOS transistor

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