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International Workshop on Science and Technology of Crystalline Si Solar Cells 2-3 October 2006 , Sendai, Tohoku Univ.

Time

SESSION/ Pres. No

Duration

Authors

Topics

First day

SESSION 1: Plenary and Crystal Growth 9:25 1.1 0:05 9:30 1.2 0:30 10:00 1.3 0:30 10:30 1.4 0:30

Kazuo Nakajima (IMR, Tohoku Univ) Hideo Shingu (WERC) Armin Müller (Deutsche Solar AG) E.J. Øvrelid, E. Olsen, E.A. Meese, H. Laux and M. M'Hamdi (SINTEF Materials Technology, Norway) Coffee Break

Chair: Kazuo Nakajima Welcome address The Roles of Solar-Cells as the Major Energy Resource Large scale mc-Si ingots for PV application Directional crystallization of silicon ingots, fluid flow modelling, heat transfer analysis and characterisation

11:00 SESSION 2: Crystal Growth 11:20 2.1

0:20

Chair: Tonio Buonassisi 0:30

Kazuo Nakajima, Kozo Fujiwara, Wugen Pan, Masatoshi Tokairin, Yoshitaro Nose and Noritaka Usami (IMR, Tohoku Univ) Koji Arafune, Hitoshi, Sai, Yoshio Ohshita, Masafumi Yamaguchi (Toyota Technological Institute) Chung-Wen Lan (NTU, Taiwan), C. K. Hsieh and W. C. Hsu (SAS, Taiwan) Lunch

Development of textured high-quality Si multicrystal Ingots with same grain orientation and large grain sizes by the new dendritic casting method

11:50 12:20 12:50

2.2 2.3

0:30 0:30 1:10

Directional solidification of multicrystalline silicon ingot Efficient Czohralski Solar-Grade Silicon Growth

SESSION 3: Feedstock 14:00 14:30 15:00 15:30 16:00 SESSION 4: Poster Preview 16:20 4.1 0:03

LJ Liu, XJ Chen, S Nakano, K Kakimoto (Kyushu Univ.) Kentaro Kutsukake, Noritaka Usami, Kozo Fujiwara, Wugen Pan, Yoshitaro Nose, and Kazuo Nakajima (IMR, Tohoku Univ) M. Dhamrin, M. Suda, T. Saitoh and K. Kamisako (TUAT) Isao Takahashi, Yoshitaro Nose, Kozo Fujiwara, Noritaka Usami, Kazuo Nakajima (IMR, Tohoku Univ) M. S. Jeon and K. Kamisako (TUAT) Masatoshi Tokairin, Kozo Fujiwara, Wugen Pan, Noritaka Usami, Yoshitaro Nose and Kazuo Nakajima (IMR, Tohoku Univ) Chandan Banerjee, Akira Yamada, and Makoto Konagai (Tokyo Institute of Technology) Tomohiro Yoshimura, Takashi Minemoto and Hideyuki Takakura (Ritsumeikan Univ) Meiyu Zhang, Chao Chen and Jiafa Cai (Xiamen Univ., China) Kensaku Maeda, Kozo Fujiwara, Noritaka Usami, Yoshitaro Nose, Gen Sazaki, and Kazuo Nakajima (IMR, Tohoku Univ) K. Araki, H. Sugimoto, M. Tajima (JAXA) , T. Eguchi, I. Yamaga (Daiichi Dentsu), M. Dhamrin and T. Saitoh Posters/Reception

Chair: Tadashi Saitoh 0:30 0:30 0:30 0:30 0:20

Hitoshi Takahashi (Hemlock Semiconductor Corp.) Ragnar Tronstad , Erik Enebakk and Jan Vedde (Elkem Solar AS, Norway) Hiroyuki Baba, Hisashi Osanai, Shoichi Hiwasa (JFE Steel) Satoru Wakamatsu (Tokuyama) Coffee Break

3.1 3.2 3.3 3.4

Polycrystalline Silicon Supply Demand Outlook Silicon produced by metallurgical refining process at Elkem Solar AS has shown promissing results in multi- and mono crystalline solar cells Advanced Metallurgical Purification Process for Solar Grade Silicon The present situation for solar grade silicon feedstock

Chair: Koji Arafune Investigation of a unidirectional solidification process for Si crystals with a transient global model Interaction between grain boundaries and sub grain boundaries in bulk multicrystalline silicon Impact of Recombination Centers Electronic Properitis on p-Type Solar Cell Performance A new growth method of bulk polycrystalline Si for solar cells Properties of SiNx:H Anti-Reflection Films and Effect of HF Treatment Development of a new technique for growing a high-quality polycrystalline Si ingot for solar cells Fabrication of high efficiency heterojunction solar cell by using n-µc-3C-SiC as an emitter Effect of hydrogen passivation on sperical Si solar cells with different carbon concentration Evaluation of minority carrier diffusion length in polycrystalline silicon by surface photovoltage technique Direct observation of morphology transitions of Si solid/ liquid interface

16:23

4.2

0:03

16:26 16:29 16:32 16:35

4.3 4.4 4.5 4.6

0:03 0:03 0:03 0:03

16:38

4.7

0:03

16:41 16:44

4.8 4.9

0:03 0:03

16:47

4.10

0:03

16:50

4.11

0:03

Analysis of Intra-grain Defects in Multicrystalline Si Wafers by PL Mapping Tomography

17:00

1:30

International Workshop on Science and Technology of Crystalline Si Solar Cells 2-3 October 2006 , Sendai, IMR Tohoku Univ.

Time

SESSION/ Pres. No

Duration

Authors

Topics

Second day

SESSION 5: Feedstock/Impurities 9:00 9:30 10:00 10:30 5.1 5.2 5.3 0:30 0:30 0:30 0:20

Baoping Zhang and Chao Chen (Xiamen Univ, China) L. J. Geerligs (ECN, Neitherland) Tonio Buonassisi (Ever Green Solar, USA) Coffee Break

Chair: Thorsten Trupke Present status of R&D for Si feedstock in China Impact of specific metallurgical impurities in silicon feedstock on solar cell efficiency, and potential benefits of n-type doping Metals in Multicrystalline Si Solar Cells: Kinetics, Interactions, and Remediation

SESSION 6: Production Technology 10:50 11:20 11:50 SESSION 7: Selected topics I 13:00 13:30 14:00 14:30 SESSION 8: Selected topics II 14:50 15:20 15:50 8.1 8.2 8.3 0:30 0:30 0:10

T. Trupke, R.A. Bardos, M.D. Abbott, K. Fisher (UNSW, Australia) and J. Bauer, O. Breitenstein (MPI Halle, Germany) Karsten Bothe and Jan Schmidt (ISFH, Germany) Tadashi Saitoh

Chair: Yutaka Hayashi

Hitoshi Sakata, Mikio Taguchi, Eiji Development of High-efficiency HIT Solar Cells Maruyama and Makoto Tanaka (SANYO) Satoshi Arimoto and Hiroaki Morikawa Improvement of Production Technology for Multi-Crystalline Silicon Solar Cells (Mitsubishi Electric Corporation) Lunch

6.1 6.2

0:30 0:30 1:10

Chair: L. J. Geerligs 0:30 0:30 0:30 0:20

Takeshi Yoshikawa and Kazuki Morita (IIS, The Univ. of Tokyo) Hiroyuki Fujiwara, Z. Liu, A. Masuda, and Michio Kondo (RCPV AIST) Takashi Minemoto and Hideyuki Takakura (Ritsumeikan Univ) Coffee Break

7.1 7.2 7.3

Solidification Refining of Si with Si-Al Melts Research on crystalline Silicon solar cells at AIST Fabrication of spherical silicon crystals and their application for solar cell substrates

Chair: Noritaka Usami Luminescence imaging for fast shunt localization in silicon solar cells and silicon wafers Boron-oxygen-related carrier lifetime instabilities in crystalline silicon Closing Remark

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