Read Microsoft PowerPoint - ASML_EUV into production hand-out.ppt text version

EUVL into production ­ Update on ASML's NXE platform

Judon Stoeldraijer, David Ockwell, Christian Wagner

2009 EUVL Symposium, Prague

Outline

· Introduction

· System roadmap · Platform layout

· Building the NXE:3100

· · · · ·

NXE3100 main specifications & technology Vacuum technology Design & integration strategy Status of main system modules Preparation for volume production & shipment

· Outlook & summary

Slide 2 |

2009 EUVL Symposium, Prague

TWINSCAN EUV Product Roadmap

2006

2010

2012

2013

ADT

Resolution = 32 nm NA = 0.25, = 0.5 Overlay < 7 nm Throughput 5 WPH

NXE:3100

Resolution = 27 nm NA = 0.25, = 0.8 Overlay < 4.5 nm Throughput 60 WPH

NXE:3300B

Resolution = 22 nm NA = 0.32, = 0.2-0.9 Overlay < 3.5 nm Throughput 125 WPH

NXE:3300C

Resolution = 18/16* nm NA = 0.32, Overlay < 3 nm Throughput 150 WPH

Main improvements 1) New EUV platform :NXE 2) Improved low flare optics 3) New high illuminator 4) New high power LPP source 5) Dual stages

Main improvements 1) New high NA 6 mirror lens 2) New high efficiency illuminator 3) Off-Axis illumination option 4) Source power increase 5) Reduced footprint

Slide 3 |

Platform enhancements 1) Source power increase

* Requires <7nm resist diffusion length

2009 EUVL Symposium, Prague

NXE lithography platform system layout

6 mirror projection lens Reflective 4x reduction 6" reticle

Wafer & reticle handler Vacuum environment Dual wafer 13.5nm light source stage

Slide 4 |

2009 EUVL Symposium, Prague

Outline

· Introduction

· System roadmap · Platform layout

· Building the NXE:3100

· · · · ·

NXE3100 main specifications & technology Vacuum technology Design & integration strategy Status of main system modules Preparation for volume production & shipment

· Outlook & summary

Slide 5 |

2009 EUVL Symposium, Prague

NXE:3100 main specifications

· · · · ·

NA=0.25 Sigma=0.8 Resolution 27nm SMO=4.5nm MMO=7.0nm

· TPT=60wph (10mJ/cm2 resist) · 1st generation of NXE platform

Slide 6 |

2009 EUVL Symposium, Prague

NXE platform leverages on its predecessors

Module Optics Metrology (TIS, ILIAS) Reticle Stage Reticle Handler Wafer Stage Wafer Handler Vacuum System Learning from

Based on ADT Optics, improved wave front and flare, higher sigma in illuminator (0.5 to 0.8) Proven XT principle adapted to vacuum Building on Alpha and advanced TWINSCAN; E-clamp from Alpha; new REMA (X and Y) Fully automated using in-vacuum robot and internal library with 6 slots Dual planar stage + balance mass; E-clamp

Alignment/Level sensor Vacuum compatible Smash & XT level sensor

New vacuum robot, load-lock and pre-aligner, NXT robot for atmospheric part Based on ADT layout, factory way of working adapted to material specification and handling

Slide 7 |

2009 EUVL Symposium, Prague

Achieving an Ultra Clean Vacuum (UCV) by right material selection, equipment invests & procedures

· Outgassing budget for all modules · Every material is being tested · Investments made in the right equipment to

enable clean production and qualification

· Cleaning of all materials and modules is

integrated as a part of Supply Chain and internal assembly

High vacuum test chamber + mass spec for qualification

· Procedures and training for handling and

manufacturing, in-house and at suppliers

Slide 8 |

2009 EUVL Symposium, Prague

Vacuum Vessels Outgassing requirements reached in practice

Slide 9 |

2009 EUVL Symposium, Prague

Building the NXE:3100

TOP Reticle flow Scanning reticle Reliability TPUT BOTTOM Wafer flow Measure wafer Full functional machine Expose Tool

MID/SOURCE Dose at reticle level Correct light wafer level System dynamics Imaging Overlay

H2/2009=now

Slide 10 |

H1 2010

2009 EUVL Symposium, Prague

Proto source is Installed and Operational at ASML

· Droplet generation (30µm diameter) µ

and laser targeting confirmed

· Control system is operational

· Source integrated in exposure · tool frame & operational

· Next steps:

· Integrate scanner source control · Dose control using ASML sensors CO2 Laser amplifiers in subfab · Integrate in situ plasma

positioning control

2009 EUVL Symposium, Prague

Excellent EUV Source Progress: 70W EUV Power at required system operation conditions

120

In-band EUV Power at I.F. (W)

110 100 90 80 70 70 60 50 40 30 20 10 0 0 50 100 150 200 250 300

Sept-09

FILE:090019aa.opj

2H-08

· Demonstration of source feasibility · Burst length = 1mSec · Power = 20W

400mSec

Sept-09

· Full size collector implemented · Dose control implemented · 30mu droplets · Debris mitigation operational · Burst Length = 400mSec (full exp. field) · Power = 70W (>3x improvement)

350 400

Time (ms)

Source: Cymer, LT1 setup data

Slide 12 |

~2x power increase required for 60 WPH

2009 EUVL Symposium

Dose Stability of ±0.35% demonstrated by applying Closed Loop Control

100 90

Open Loop EUV Power in 10ms Dose Window (+/- 11.1%)

100 90

Closed Loop EUV Power in 10ms Dose Window (+/- 0.35%)

In-badn EUV Power at I.F. (W)

In-Band EUV Power at I.F (W)

80 70 60 50 40 30 20 10 0 0

FILE:090915ca.opj

80 70 60 50 40 30 20 10 0

FILE:090915ca.opj

50

100

150

200

250

300

350

400

0

50

100

150

200

250

300

350

400

Time (ms)

Time (ms)

· Open loop dose performance is +/-11% (10ms window)

· Closed loop dose performance is +/-0.35%. · EUV power level set point for closed loop control was 50W

13

Public

© 2009 Cymer, Inc.

Optics: NXE:3100 Flare <7%, good uniformity

1st lens at ASML

Flare / % 18,0% 16,0% 14,0% 12,0% 10,0% 8,0% 6,0% 4,0% 2,0% 0,0% ADT 3100

1st

illuminator

Slide 14 |

2009 EUVL Symposium, Prague

NXE:3100 has 30% more transmission then ADT

70.0% 60.0% 50.0% Reflectance 40.0% 30.0% 20.0%

Relative Transmission

1,60 1,40 1,20 1,00 0,80 0,60 0,40

R = 69.6%

10.0% 0.0%

12.75

13

13.25

13.5

13.75

14

14.25

Wavelength (nm)

ADT

Slide 15 |

NXE:3100

2009 EUVL Symposium, Prague

Lens quality measured with EUVL interferometer

IMax: 0.70 nm 0.7 RMS Z5-Z37 (nm) 0.68 0.66 0.64 0.62 0.6

wave front <0.7nm after final adjustment

interferometer

0.1nm reproducibility

-10

-5

0

5

10

· 13.5nm interferometer

used to qualify lenses

· 0.1nm reproducibility · 0.7nm wavefront rms

Slide 16 |

2009 EUVL Symposium, Prague

Shipment container tests completed (B747)

· Loading & fit test in B747 was

successful, MOU signed by KLM/AF

Slide 17 |

2009 EUVL Symposium, Prague

ASML EUVL manufacturing area operational Photo during Install of raised floor in EUV Cabin

· 1 MegaWatt electrical power installed per cabin · 2 rail ducts each capable of 800 A · 750 meter hard ducting (varying diameters 6 mm to 250 mm) · 12,000 m3 air exhausted per hour per cabin · 52 m3 cooling water per hour per cabin · 13 ton crane with 4 lifting points, transportable to 4 cabins

Slide 18 |

2009 EUVL Symposium, Prague

Outline

· Introduction

· System roadmap · Platform layout

· Building the NXE:3100

· · · · ·

NXE3100 main specifications & technology Vacuum technology Design & integration strategy Status of main system modules Preparation for volume production & shipment

· Outlook & summary

Slide 19 |

2009 EUVL Symposium, Prague

Outlook NXE:3300 main specifications

· · · · · · · ·

1st shipment: 1Q 2012 NA = 0.32 Sigma = 0.9, conventional Resolution 22 nm hp (18 nm with optional off-axis) SMO = 3.5 nm MMO = 5.0 nm TPT = 125 wph (15 mJ/cm2 resist)

· 2nd generation of NXE platform

Slide 20 |

2009 EUVL Symposium, Prague

Summary

· NXE platform design in place · Optics and source delivered to ASML and integrated · Modules like wafer-/reticle stage, reticle-/wafer handler, reticle masking,

alignment-/level sensors build and functionally integrated

· System top/mid/bottom build and integration ongoing · NXE:3100 system in build phase · 1st shipment NXE3100 mid 2010 · Second generation with high NA optics planned for 1st half 2012

Slide 21 |

2009 EUVL Symposium, Prague

Acknowledgements The work presented has been the result of a hard work by teams at ASML and many technology partners worldwide over many years with a common goal to make EUV lithography happen. Grateful acknowledgement is expressed to the Public Authorities of The Netherlands, Germany and France for their outstanding support of the EAGLE- EUV Advanced Generation Lithography in Europe - project, as well as the MEDEA+ organization. EUREKA

MEDEA+ !2365 is the industry-driven pan-European program for advanced co-operative R&D in microelectronics to ensure Europe's technological and industrial competitiveness in this sector on a worldwide basis

Slide 22 |

2009 EUVL Symposium, Prague

Information

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