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Evolving Technologies for Discrete Semiconductor Devices

NAKAGAWA Akio

SHINOHE Takashi

In the 21st century, the progress of information systems and mobile equipment will further accelerate despite the limits of silicon technology. Discrete devices supplementing silicon LSI performance, high-density assembly, circuit technologies, and system architectures will be important. Environmental preservation, including energy-saving legislation, will influence the standards for device selection. Discrete devices will continue to evolve under the principle of optimizing circuit blocks or overall system performance.

30

p

n p

n

p

n

MOSFET

Novel lateral trench gate MOSFET

p n

3.5 3

p

2

2.5 2 1.5

(

IGBT IGBT

3 ( 4 IGBT

0 0.2 0.4 0.6 0.8

IGBT IGBT IGBT IGBT

1 0.5 0

1

1.2

55 m

p

V

IGBT

Tradeoff between on-state voltage drop and fall time for different generation IGBTs

31

n p

n p n p n p n

n

MOSFET

32

100

Si IGBT

10

SiC

cm2

BSIT

1

NAKAGAWA Akio D.Eng.

m

MOS

0.1

MOSFET 4H-SiC

MOS

0.01 10 100 1,000 10,000

SHINOHE Takashi

Expected characteristics of power semiconductor devices

33

Information

20001

4 pages

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