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IEGT

Technology of IEGT Application

MATSUMOTO Toshiaki

TAI Hiromichi

KODANI Kazuya

The power device is the key component of a high-power converter main circuit. The Injection Enhanced Gate Transistor (IEGT) not only can withstand high voltage, but also has fast switching capability like an insulated-gate bipolar transistor (IGBT). Therefore, it is difficult to make a compromise between the isolation design required for high-voltage equipment and the compactness required to reduce stray inductance in order to suppress voltage surge. To enlarge the power unit rating, it is important to realize a low-inductance main circuit so as to utilize series or parallel connection of IEGTs. The press pack type IEGT has large thermal capacitance and is used for large power converters, and the need exists for improvement of the IEGT utilization rate. The module type IEGT has smaller thermal capacitance than the press pack type, so the mounting technology to enhance the power unit capacity becomes more important.

20

1

PU 16 12

IEGT

IGBT

8 4 0 0 PU : Per Unit value

GTO

2 4 6 kV 8

Power management capability in terms of turn-off speed of power device

2

11

V ce

dV ce ts dt

dV ce dt

IEGT

ts

Z Y X

IEGT Voltage balance of series-connected power devices 6-series connected 4,500 V 1,500 A IEGT power unit structure analysis model

IC

VCE

Voltage type inverter circuit

Inside pressure distribution of press pack type power device

12

50 40 K

IEGT

30 20 10 0 0.0

FWD

1

3

2

4

0.5

1.0 s

1.5

2.0

S

IEGT

IEGT 4,500 V 800 A IEGT module equivalent circuit

Result of chip temperature simulation for press pack type power device

A 350 300 250 200 150 4 1 100 50 0 50 0 40 a A 350 300 250 200 150 4 100 50 0 50 0 40 80 b 120 160 200 240 s 1 80 120 160 200 240 s

3

IEGT

Result of 4,500 V-800 A IEGT module simulation and measured result

Flow of simulation

13

4.5 4 K/ W/cm2 3.5 3 2.5 2

Ls : 25 nH

A

Ls : 70 nH

B C D

0 20 40 60 80 100 120 140

1.5 1

IEGT 4,500 V 800 A

0.5 0

IEGT 400 kVA IEGT power unit Evaluation and reduction of contact thermal resistance

4

MATSUMOTO Toshiaki

TAI Hiromichi

KODANI Kazuya

Pressure distribution of module type power device

14

Information

20007

4 pages

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