Read DOKTORA PROGRAMI AÇILMASI ÇN BAVURU FORMU text version

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Adi Soyadi: brahim Yilmaz Doum Tarihi: 06.08.1975 Unvani: Yrd. Doç. Dr. Örenim Durumu: Derece Lisans Y. Lisans Doktora Alan Fizik Kati Hal Fizii Kati Hal Fizii Üniversite Orta Dou Teknik Üniversitesi Orta Dou Teknik Üniversitesi Rensselaer Polytechnic Institute Yil 1997 1999 2004

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Akademik Unvanlar: Yardimci Doçentlik Tarihi : 04.03.2011 Doçentlik Tarihi : Profesörlük Tarihi :

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Yönetilen Yüksek Lisans ve Doktora Tezleri 6.1. Yüksek Lisans Tezleri 6.2. Doktora Tezleri Yayinlar 7.1. Uluslararasi hakemli dergilerde yayinlanan makaleler (SCI & SSCI & Arts and Humanities)

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1. "Time Resolved Charge Profiling of Polarization Dipoles in High Power 525 nm Green GaInN/GaN Light Emitting Structures", Y. Xia, Y. Li, Y. Ou, W. Zhao, M. Zhu, I. Yilmaz, T. Detchprohm, E.F. Schubert, and C. Wetzel, Phys. Stat. Sol. (a) 203(7), 1806­1810 (2006) 2. "Photoluminescence of AlGaN grown on bulk AlN substrates", G. Tamulaitis, I Yilmaz, M.S. Shur, Q. Fareed, R. Gaska and M.A. Khan, Appl. Phys. Lett. 85, 206 (2004) 3. "Carrier lifetime in conductive and vanadium-doped 6H-SiC substrates", G. Tamulaitis, I. Yilmaz, M. S. Shur, T. Anderson, R. Gaska, Appl. Phys. Lett., 84, No.3, 335-337, (2004)

4. "Photoluminescence of GaN Deposited on Single Crystal Bulk AlN with Different Polarities", G. Tamulaitis, I. Yilmaz, M. S. Shur, R. Gaska, C. Chen, J. Yang, E. Kuokstis, A. Khan, C. Rojo, L. Schowalter, Appl. Phys. Lett., 83, No.17, 3507-3509, (2003) 5. "Time-resolved electroluminescence of AlGaN-based light-emitting diodes with emission at 285 nm", M. Shatalov, A. Chitnis, V. Mandavilli, R. Pachipulusu, J. P. Zhang, V. Adivarahan, S. Wu, G. Simin, M. Asif Khan, G. Tamulaitis, A. Sereika, I. Yilmaz, M. S. Shur, R. Gaska, Appl. Phys. Lett. 82, No.2, 167-169 (2003). 6. "Deep-ultraviolet emission of AlGaN/AlN quantum wells on bulk AlN", R. Gaska, C. Chen, J. Yang, E. Kuokstis, A. Khan, G. Tamulaitis, I. Yilmaz, M. S. Shur, J. C. Rojo, L. J. Schowalter, Appl. Phys. Lett. 81, No. 24, 4658-4660 (2002). 7. "AlGaN single-quantum-well light-emitting diodes with emission at 285 nm", V. Adivarahan, S. Wu, A. Chitnis, R. Pachipulusu, V. Mandavilli, M. Shatalov, J. P. Zhang, M. A. Khan, G. Tamulaitis, A. Sereika, I. Yilmaz, M. S. Shur, R. Gaska, Appl. Phys. Lett. 81, No.19, 3666-3668 (2002). 8. "Radiative Donor-acceptor Pair Recombination in TlInS2 Single Crystals", A. Aydinli, N.M. Gasanly, I. Yilmaz, and A. Serpengüzel, Semicond. Sci. and Technol., 14, 599-603 (1999). 9. "Temperature Dependence of the Raman-active Phonon Frequencies in Indium Sulfide." N.M. Gasanly, H. Özkan, A. Aydinli, and I. Yilmaz, Solid State Commun., 110, No. 4, 231-236 (1999). 10. "Donor-acceptor Pair Recombination in AgIn5S8 Single Crystals", N. Gasanly, A. Serpengüzel, A. Aydinli, O. Gürlü, and I. Yilmaz, J. Applied Physics, 85, No. 6, 3198-3201 (1999).

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11. "Dependence of the Photoluminescence of Tl2InGaS4 Layered Crystal on Temperature and Excitation Intensity. ", N.M. Gasanly, A. Serpengüzel, O. Gürlü, A. Aydinli, and I. Yilmaz, Solid State Commun., 108, No. 8, 525-530 (1998). 12. "Low-Temperature Photoluminescence Spectra of Layered Semiconductor TlGaS2", N.M. Gasanly, A. Aydinli , A. Bek and, . Yilmaz, Solid State Commun.,105, No. 1, 21-24 (1998). 7.2. Uluslararasi dier hakemli dergilerde yayinlanan makaleler 7.3. Uluslararasi bilimsel toplantilarda sunulan ve bildiri kitabinda (Proceedings) basilan bildiriler 1. "Discrete Steps in the Capacitance-Voltage Characteristics of GaInN/GaN Light Emitting Diode Structures", Y. Xia, E. Williams, Y. Park, I Yilmaz, J.M. Shah, E.F. Schubert, and C. Wetzel, Proc. Mat. Res. Soc. Symp. Vol 831, E3.38 (2005) 2. "Deep level emission in Vanadium doped and high purity 6H-SiC", G.Tamulaitis, I. Yilmaz, M.S. Shur, T.Anderson, R.Gaska, MRS-Sympos. Proc. Vol.743, L3.34.1 (2003). 3. "Stimulated emission at 258 nm in AlN/AlGaN quantum wells grown on bulk AlN substrates", R. Gaska, Q. Fareed, G. Tamulaitis, I. Yilmaz, M.S. Shur, C. Chen, J. Yang, E. Kuokstis, A. Khan, J.C. Rojo, L.J. Schowalter, MRS-Sympos. Proc. Vol.764, C6.9.1 (2003). 4. "The Influence of Substrate Surface Polarity on Optical Properties of GaN Grown on Single Crystal Bulk AlN", G. Tamulaitis, I. Yilmaz, M. S. Shur, R. Gaska, C. Chen, J. Yang, E. Kuokstis, A. Khan, C. Rojo, L. Schowalter, MRS-Sympos. Proc. Vol.743, L3.34.1 (2003). 5. "Growth and Characterization of Deep UV Emitter Structures Grown on Single Crystal Bulk AlN Substrates", X. Hu, R. Gaska, C. Chen, J. Yang, E. Kuokstis, A. Khan, G. Tamulaitis, I. Yilmaz, M. S. Shur, C. Rojo, L. Schowalter, MRS-Sympos. Proc. Vol.743, L6.30.1 (2003). 6. "Photoluminescence of TlBX2-type Layered Crystals Studied by Temperature and Excitation Intensity Dependence", Yilmaz, I., Gasanly, N.M., Nagiev, V.M. and Dzhafarova, M., XIIth International Conference on Ternary and Multinary Compounds, (2000), p.P2-85. 7.4. Yazilan uluslararasi kitaplar veya kitaplarda bölümler 7.5. Ulusal hakemli dergilerde yayinlanan makaleler 1. "Crystal Data for A3B5C9 ­Type Ternary Compounds", H. Özkan, N.M. Gasanly, I. Yilmaz, A. Çulfaz and V. Nagiev, Tr. J. of Physics, 22, 519-524 (1998). 7.6. Ulusal bilimsel toplantilarda sunulan ve bildiri kitabinda basilan bildiriler 1. "TlBX2-tipi Tabakali Kristallerin Sicaklik ve Uyarma iddetine Bali Fotoiimalari", Yilmaz, I., Gasanly, N.M., Aydinli, A. ve Serpenguzel, A., Türk Fizik Dernei 18. Fizik Kongresi, (1999), s.196. 2. "Visible Photoluminescence from AgIn5S8 Single Crystals", Yilmaz, I., Gasanly, N.M., Serpenguzel, A., Aydinli, A. and Gurlu,O., Youn Madde Fizii Seminerleri - VII, (1998), s.P1. 7.7. Dier yayinlar 7.8. Uluslararasi atiflar (Kaynak: Web of Science: Toplam: 210) 1. Title: Photoluminescence of AlGaN grown on bulk AlN substrates Author(s): Tamulaitis, G; Yilmaz, I; Shur, MS, et al. Source: APPLIED PHYSICS LETTERS Volume: 85 Issue: 2 Pages: 206-208 Published: JUL 12 2004 Times Cited: 11

2. Title: Carrier lifetime in conductive and vanadium-doped 6H-SiC substrates

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Author(s): Tamulaitis, G; Yilmaz, I; Shur, MS, et al. Source: APPLIED PHYSICS LETTERS Volume: 84 Issue: 3 Pages: 335-337 Published: JAN 19 2004 Times Cited: 9 3. Title: Growth and characterization of deep UV emitter structures grown on single crystal bulk AlN substrates Author(s): Hu, X; Gaska, R; Chen, C, et al. Conference Information: Symposium on GaN and Related Alloys held at the 2002 MRS Fall Meeting, Date: DEC 02-06, 2002 BOSTON MA Source: GAN AND RELATED ALLOYS-2002 Volume: 743 Pages: 439-443 Published: 2003 Times Cited: 1 4. Title: Time-resolved electroluminescence of AlGaN-based light-emitting diodes with emission at 285 nm Author(s): Shatalov, M; Chitnis, A; Mandavilli, V, et al. Source: APPLIED PHYSICS LETTERS Volume: 82 Issue: 2 Pages: 167-169 Published: JAN 13 2003 Times Cited: 28 5. Title: Photoluminescence of GaN deposited on single-crystal bulk AlN with different polarities Author(s): Tamulaitis, G; Yilmaz, I; Shur, MS, et al. Source: APPLIED PHYSICS LETTERS Volume: 83 Issue: 17 Pages: 3507-3509 Published: OCT 27 2003 Times Cited: 5 6. Title: Deep-ultraviolet emission of AlGaN/AlN quantum wells on bulk AlN Author(s): Gaska, R; Chen, C; Yang, J, et al. Source: APPLIED PHYSICS LETTERS Volume: 81 Issue: 24 Pages: 4658-4660 Published: DEC 9 2002 Times Cited: 36 7. Title: AlGaN single-quantum-well light-emitting diodes with emission at 285 nm Author(s): Adivarahan, V; Wu, S; Chitnis, A, et al. Source: APPLIED PHYSICS LETTERS Volume: 81 Issue: 19 Pages: 3666-3668 Published: NOV 4 2002 Times Cited: 46 8. Title: Radiative donor-acceptor pair recombination in TlInS2 single crystals Author(s): Aydinli, A; Gasanly, NM; Yilmaz, I, et al. Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY Volume: 14 Issue: 7 Pages: 599-603 Published: JUL 1999 Times Cited: 26 9. Title: Donor-acceptor pair recombination in AgIn5S8 single crystals Author(s): Gasanly, NM; Serpenguzel, A; Aydinli, A, et al. Source: JOURNAL OF APPLIED PHYSICS Volume: 85 Issue: 6 Pages: 3198-3201 Published: MAR 15 1999 Times Cited: 27 10. Title: Low-temperature photoluminescence spectra of layered semiconductor TlGaS2 Author(s): Gasanly, NM; Aydinli, A; Bek, A, et al. Source: SOLID STATE COMMUNICATIONS Volume: 105 Issue: 1 Pages: 21-24 Published: JAN 1998 Times Cited: 16

11. Title: Temperature dependence of the Raman-active phonon frequencies in indium sulfide

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Author(s): Gasanly, NM; Ozkan, H; Aydinli, A, et al. Source: SOLID STATE COMMUNICATIONS Volume: 110 Issue: 4 Pages: 231-236 Published: 1999 Times Cited: 5 Ulusal & Uluslararasi Projeler (DPT, TÜBTAK, AB, vb) dari Görevler

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10. Bilimsel ve Mesleki Kurululara Üyelikler Turkish American Scientists and Scholars Association Materials Research Society 11. Ödüller Teaching Excellence Award, RPI (2001). Turkish Government Scholarship for PhD in Physics, given 3 students (2000). Turkish National Physics Olympiad Candidate Team Award (1992). Middle East Technical University, Dean's list (1997). 12. Son iki yilda verdiiniz lisans ve lisansüstü düzeydeki dersler için aaidaki tabloyu doldurunuz. Haftalik Saati Akademik Örenci Dönem Dersin Adi Yil Sayisi Teorik Uygulama Güz lkbahar Güz lkbahar Not: Açilmisa, yaz döneminde verilen dersler de tabloya ilave edilecektir.

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DOKTORA PROGRAMI AÇILMASI ÇN BAVURU FORMU

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