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2005 International Conference on Compound Semiconductor Manufacturing Technology

April 11-14, 2005

Register Online at

Sheraton New Orleans, Louisiana, USA

Jackson Square, New Orleans - St. Louis Cathedral Daytime with Carriage; photographer: Carl Purcell, © New Orleans Metropolitan Convention and Visitors Bureau, Inc.


SUNDAY, April 10 6:30 PM ­ 8:30 PM REGISTRATION

Grand Registration Desk

MONDAY, April 11 7:00 AM ­ 10:00 AM 7:00 AM ­ 8:00 AM 8:00 AM ­ 5:15 PM


Grand Registration Desk

Buffet Breakfast

Grand Ballroom Foyer


Grand Chenier, Grand Couteau, and Grand Ballroom B

12:00 PM­ 1:30 PM 12:00 PM ­ 8:00 PM 6:00 PM ­ 9:00 PM


Grand Ballroom A


Grand Registration Desk


Grand Ballroom CDE

TUESDAY, April 12 7:00 AM ­ 5:30 PM 7:00 AM ­ 8:00 AM 8:00 AM ­ 10:00 AM 10:00 AM ­ 10:30 AM 7:00 AM ­ 5:00 PM


Grand Registration Desk

Continental Breakfast

Grand Ballroom CDE


Grand Ballroom AB


Grand Ballroom CDE

EXHIBITS OPEN (will close during session from 8 ­ 10 AM)

Grand Ballroom CDE

10:30 AM ­ 12:00 PM 12:00 PM ­ 1:40 PM 1:40 PM ­ 3:20 PM 3:20 PM ­ 3:50 PM 3:50 PM ­ 5:20 PM


Grand Ballroom AB


Grand Ballroom CDE


Grand Ballroom AB


Grand Ballroom CDE


Grand Ballroom AB

7:00 PM ­ 10:00 PM WEDNESDAY, April 13 7:00 AM ­ 11:00 AM 7:00 AM ­ 8:00 AM 8:00 AM ­ 9:40 AM



Grand Registration Desk

Continental Breakfast

Grand Ballroom C


Grand Ballroom AB

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8:00 AM ­ 9:40 AM


Backend-Of-The-Line Process

Grand Ballroom D

9:40 AM ­ 10:00 AM 10:00 AM ­ 11:40 AM


Grand Ballroom C


Grand Ballroom AB

10:00 AM ­ 11:40 AM

SESSION 7: PROCESS II Dielectrics & Dry Etch

Grand Ballroom D

11:40 AM ­ 1:40 PM


Grand Chenier, Grand Couteau, and Grand Ballroom E

1:00 PM ­ 5:00 PM 1:40 PM ­ 3:10 PM


Grand Foyer Registration Desk


Grand Ballroom AB

1:40 PM ­ 3:10 PM 3:20 PM ­ 4 :50 PM


Grand Ballroom D


Grand Couteau, Grand Chenier, Rampart, & Grand Ball Room E

5:30 PM ­ 7:30 PM



THURSDAY, April 14 7:00 AM ­ 9:00 AM 7:00 AM ­ 8:00 AM 8:00 AM ­ 9:50 AM 8:00 AM ­ 9:50 AM


Grand Regisration Desk

Continental Breakfast

Grand Ballroom Foyer


Grand Ballroom AB

SESSION 12: PROCESS III Photolithography & Metallization

Grand Ballroom D

9:50 AM ­ 10:10 AM 10:10 AM ­ 12:00 PM


Grand Ballroom Foyer


Grand Ballroom AB

12:10 PM ­ 2:10 PM


Grand Ballroom C

2:10 PM ­ 2:50 PM


Grand Ballroom C

2:50 PM


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I would like to invite you to attend the 20th annual International Conference on Compound Semiconductor Manufacturing Technology (MANTECH) to be held in New Orleans, Louisiana from April 12 - 14, 2005, with a workshop on April 11, 2005. The conference will be held at the Sheraton New Orleans Hotel, which is just across Canal Street from the historic French Quarter. Each year, the CS MANTECH Conference provides a forum for sharing information on manufacturing technology and practices in an open and informal environment. To ensure that our technical program covers the practices, trends, and challenges of our dynamic industry, we have invited representatives from different sectors of the industry to serve on the Technical Program Committee (TPC). This committee currently consists of over 70 volunteers from a broad spectrum of companies across our industry, research laboratories, and funding agencies. The TPC has put together a very interesting and varied program of papers and topics covering the details of manufacturing, as well as technology trends and emerging technologies, reflecting up-to-date directions and practices. In addition to the technical presentations, CS MANTECH offers a wide range of events such as the Workshop, Exhibits, Rump Sessions, and the Ugly Picture Competition. We also host an Exhibits Reception, the International Reception, and the Interactive Forum. These events are designed to maximize the opportunities for the exchange of information, and for networking and informal interactions between delegates. New this year, is the Exhibitors' Forum which will provide industry exhibitors an opportunity to make presentations that highlight their products and services. In addition, a bit more free time will be available this year to give attendees more time to network, or just rest and re-charge. In the pages of this Advance Program you will find more details concerning these events. Our industry is dynamic. In 2001, we were riding a bubble of success. Then the bubble burst and companies were scrambling to stay afloat. After a couple of years of downsizing, consolidating, merging, and in some cases closing, it appears that the industry is recovering and the market forecast is looking fairly good. While there is a continued threat of encroachment by the silicon industry, scaling of existing compound semiconductor technologies and the emergence of new electronic and optical

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technologies, particularly the wide bandgap technologies, is helping to expand the compound semiconductor market. At the same time, there are the ever-present challenges of short time to market and lower margins. These factors make this year's CS MANTECH Conference more important than ever, and I urge anyone associated with compound semiconductor manufacturing to attend the conference and update their skills and knowledge base. Every year the organizing committee strives to provide the best possible conference, and every year, thanks to its efforts and the constructive feedback from delegates, the conference improves. I am confident that this year's conference will be the best ever, and I look forward to seeing you there. Best Regards, Jim Sewell Conference Chairman 2005 International Conference on Compound Semiconductor Manufacturing Technology

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(partial list, as of January 10, 2005)

MANTECH is an independent not-for-profit organization whose mission is to promote technical discussion and scientific education in the compound semiconductor manufacturing industry. The continued success of the conference is enabled by donations from corporate sponsors. The 2005 MANTECH Conference Committee gratefully acknowledges the support from our sponsors.

Booz Allen Hamilton OKI Air Force Research Laboratory KLA Tencor Hitachi Cable Sumitomo Electric Northrop Grumman TDK Kopin Picogiga

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We would like to once again thank our 2004 sponsors.

Booz Allen Hamilton TDK MAX International Engineering Group EMCORE Air Force Research Laboratory Oki MBE Technology Picogiga Sumitomo Electric Northrop Grumman Skyworks Solutions, Inc. Kopin Anadigics IntelliEPI Freiberger Hitachi Cable AXT IQE

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The Technical Program Committee has assembled an outstanding technical program for the 2005 International Conference on Compound Semiconductor Manufacturing Technology. The program consists of 82 outstanding papers, including 29 international papers, and representing over 50 companies, universities and government laboratories. In addition to this strong technical program, the 2005 CS MANTECH program has been scheduled to provide a wide selection of social events, providing opportunities to network and build business relationships. Our week will begin on Monday, April 11th, with a Workshop, which has an expanded format. Workshop attendees may select from a total of 12 sessions, which will be running three in parallel. The topics span four streams: Processing, Networks, Cellphone, and Business. The Processing workshops will address photolithography, metallization & dielectrics, wet & dry etch, and backside processing. Networks will provide an overview of PAN's, LAN's, and MAN's. The Cellphone stream will cover cellphone standards, receivers and filters, power amplifiers, and switches. Business sections will address fab logistics and accounting basics for engineers. The Industry Exhibits feature approximately 80 prominent suppliers in the compound semiconductor industry. The exhibits open on Monday evening with the first MANTECH social event, the Exhibits Reception. The exhibits continue throughout Tuesday, when attendees may enjoy breakfast, morning and afternoon breaks and the Exhibits Lunch, while browsing the exhibit aisles. A new event this year, the Exhibitors' Forum will be held during the lunchtime break on Wednesday. The technical sessions will begin on Tuesday morning, April 12th, with the Plenary Session, with talks addressing various aspects of the compound semiconductor markets, including market trends, technology benchmarking and roadmaps. Opening the program, Paul Augustine, General Manager, Nokia Product Line Director at RF Micro Devices, will present the Keynote Address on "Trends and Opportunities for Gallium Arsenide Semiconductors in Handsets." His talk will review factors which have contributed to GaAs success in the power amplifier and other market segments, future handset trends and market opportunities. The second plenary presentation, by Mark Rosker, DARPA, will provide an overview of wide bandgap technologies for microwave and millimeter-wave applications. The third plenary talk, presented by Chuck

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Weitzel, Freescale Semiconductor, will include performance comparisons for GaAs, SiGe, LDMOS, GaN and related technologies. Our fourth plenary presentation, given by Sean McGrath, Philips Semiconductors, BLCellular Systems, will include an overview on benchmarking of achievements and relative market opportunities in wide bandgap technologies. The fifth presentation, given by Herbert Bennett, National Institute of Standards and Technology, will include highlights on compound semiconductors from the perspective of the 2003 International Technology Roadmap for Semiconductors (ITRS). The final paper in this session, presented by Asif Anwar, Strategy Analytics, will provide us with an overview of the compound semiconductor supply chain and critical factors that are forecast to drive market share gains. Following the Plenary Session, the general Technical Sessions address several key areas of compound semiconductor technology: HBT's, FET's, HEMT's, Wide Bandgap RF Technology and Devices, Processing, Materials, Reliability, Test, and Optoelectronics. To accommodate the number of selected, high quality papers, and to accommodate some new features for this year's conference, there will be parallel technical sessions on both Wednesday and Thursday. Attendees will enjoy a taste of New Orleans, with a funfilled evening of food, drinks, and entertainment, during the International Reception on Tuesday evening.. The popular Rump Sessions will be held on Wednesday afternoon, complemented with snacks and drinks. Attendees may join any of the four parallel topics, where moderators will encourage informal, highly interactive, lively and informative discussions. Traditionally one of the highlights of the conference, this year's Interactive Forum will be held on Thursday, along with a Lunch Reception. The Interactive Forum is a poster session that includes papers that could not be fitted into the other general technical sessions, as well as all of the presented papers. It provides an excellent opportunity to meet with any of the authors and to discuss the papers casually over lunch. Our final social event will be the Ugly Picture Contest Finals. The entertaining ugly picture finals always proves to be an enjoyable event, so please plan to attend and enjoy some additional snacks and drinks in the company of your colleagues.

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New ­ Expanded Tutorial Workshop All of us have had to learn things for work on the fly, usually resulting in incomplete understanding. This year's expanded workshop aims to remedy that for a variety of topics. All are taught by international experts in their fields "from the ground up", assuming no extensive background, to allow all of us to fill in those voids in our understanding. The sessions are each 1-hour of basic teachings followed by 30 minutes of more advanced aspects and 15 minutes for questions and discussions. The workshop is organized into four "streams" (mostly) in parallel. Complete notes will be provided on all topics, so you can read the notes from those classes you cannot attend. Stream 1 is fab processing basics. It starts with Peter Meng of WIN Semiconductor on everything you always wanted to know about Photolithography (but were afraid to ask). Then Steve Mahon of TriQuint will explain the various types of thin film depositions of both dielectrics and metals. After lunch, Pat Fowler of Anadigics will wake everyone out of their post meal drowsiness with a class on how we slice up the films ­ wet and dry etching. And this stream will be finished with Heather Knoedler of Skyworks explaining backend processes like grind, substrate via formation, and saw. This is "soup to nuts" for fab processing, in one short day, taught by experts from some of the biggest fabs in our world. Stream 2 will be two sessions, both taught by Professor Jing Ma from the University of New Orleans. It will start with a comprehensive overview of how networks are described and characterized - all those protocol stack elements like PHY and MAC you've heard about finally explained ­ followed by explanations of all the wireless networks that many of us sell into ­ Personal Area Networks like Bluetooth and Ultrawideband, WLANs of the various WiFi families, and Metropolitan Area Networks like WiMax. Be the first in your company to get all this down, and you can bandy about 802.11's, 15's and 16's with the best of them. Stream 3 shifts into the business world from the technical. Professor Jaquetta Clemons from the Accounting faculty of Tulane University will bravely attempt to teach us engineers and technical types how to read corporate reports, using examples from our own industry. Income statements, profit and loss statements, and balance sheets need no longer be mysterious to you if you take this class!

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And then, completing our representation from our biggest fabs, Lee Hudgins from RFMD will peel back the veil on Fab Logistics ­ what has to go on behind the scenes to let us get our wafers out the door. This is a chance to increase your understanding of that critical area of our businesses. The final stream is on cellphones, a topic near and dear to most of our hearts. Professor Sam Huang from UNO will do the first two sessions. He will first review the alphabet soup of cellphone standards for those of us who can't tell our GSMs from our GPRS's. What does it all mean, what are the differences within generations and as we change to 2.5 and 3G phones? Come to his talk and you'll learn that. His second half will cover receivers and filters for cellphones. If "super heterodyne" and "direct conversion" are mysteries to you, this is the place to come. After lunch, session 3 will be a review of power amps and power amp modules for cellphones, taught by Julien Thuret of PicoGiga. How do PA's work, what are their figures of merit, and how do we test them will all be addressed. In the final talk in this stream, Domingo Farias from TriQuint will teach us about cellphone switches ­ a surprisingly complicated component with interesting issues. He will cover design and test of switches and discuss switch configurations for different cellphone standards. As an extra added bonus, while we enjoy our lunch, Professor Michael Mizell-Nelson from UNO will give a short talk on the fascinating history of our host city, that should make us all anxious to explore New Orleans during or after the conference. The conference organizers and workshop presenters have worked hard to make this our best workshop ever, so don't miss it! Please see our web site, or, for more information. The Workshop Registration fee covers all workshops. Except for student registration, the Workshop is not included in the Conference Registration fee.


In recent years the scope of MANTECH has expanded to address the rapid changes in the compound semiconductor industry, which include the maturation of large volume GaAs manufacture, the shift of InP from research to production, and the increasing interest in both silicon carbide and gallium nitride. This growth and diversification would not have been possible without the collaboration of our equipment and material suppliers, who

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constitute the infrastructure of our manufacturing industry. The industry exhibition is an opportunity for these suppliers to showcase the products that will help attendees in their future development and manufacturing efforts. The 2005 Industry Exhibition begins Monday evening, April 11, after the Technical Workshop, and continues all day Tuesday, April 12. The exhibition is an ideal forum for conference and exhibition attendees to interact in a relaxed environment. This year, there will be three events held in the exhibit area: the Exhibits Reception Monday evening, 6:00 PM - 9:00 PM; a continental breakfast on Tuesday, 7:00 AM ­ 8:00 AM; and an Exhibits Luncheon on Tuesday, 12:00 PM - 1:40 PM. The exhibits will close during the first segment of the Plenary Session (8:00 AM 10:00 AM) and re-open at 10:00 AM, enabling all to attend. Throughout Tuesday there will also be several longer coffee breaks. We believe this format is an excellent opportunity to visit with your existing customers or suppliers and to meet new ones. For additional information please visit our web site at: Or, forward your questions to Michelle Bourke at [email protected]


The Exhibits Reception will be held in the Exhibit Hall (Grand Ballroom CDE) Monday evening, April 11, from 6:00 PM to 9:00 PM. Buffet style finger food will be offered, so instead of worrying about dinner, please stop in when you arrive, meet colleagues and see what our vendors have to offer to help you build successful products.


The Exhibits Luncheon will be held on Tuesday, April 12, from 12:00 PM to 1:40 PM in the Grand Ballroom CDE. Please pass by and have your lunch while you continue your discussions with compound semiconductor industry vendors and network with colleagues and clients from around the world.


This year sees the introduction of the Exhibitors' Forum. This will take place on Wednesday April 13 from 11:40 AM to 1:40 PM. Here exhibitors have the opportunity to present their latest technologies and offerings in an

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informal and relaxed environment. The detailed schedule for this event will be available at the conference.


The International Reception is planned for Tuesday evening from 7:00 PM to 10:00 PM. A fun evening and a chance to sample New Orleans' cultural and culinary fare is on tap. As always, this reception provides an excellent opportunity to meet colleagues and renew acquaintances in a unique social setting. Drinks and a New Orleans-style dinner will be served reception style format that will allow you to meander around to renew old acquaintances and make new ones. MANTECH extends an invitation to family and friends that may be accompanying you at the Conference to join us at this festive event. Guest tickets are $50 each. We strongly encourage you to purchase guest tickets at the time of your registration to ensure space at the reception.


It's said that a picture is worth a thousand words and that beauty is in the eye of the beholder. Dig up some of your beauties, the "ugly" pictures that show things we'd rather not see, and let them tell a story. For the past several years we have been running an Ugly Picture Contest, which has proven to be an informative and entertaining part of MANTECH. Pictures entered into the competition are not necessarily ugly, although the problems that caused the artifacts often are. Some entries are quite beautiful, some humorous, but all are interesting. For the competition to be a continuing success we need plenty of entries, so please pull out those interesting pictures or micrographs, and enter them into the contest. A digital camera will be awarded for the most popular picture. Please send your entries to [email protected] before April 1, 2005. Do not be concerned that your entry will in any way reflect poorly on you or your organization. Everyone has had problems and most have been worse than yours. Entry Rules: 1. Each entry must include one "ugly" picture (optical images, SEM, FIB, TEM, etc.). 2. Each entry must include a brief description of the observed problem. 3. Entrants are encouraged to show and describe solutions to the problem.

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The description of the problem and/or solution may contain a second (smaller) picture. 5. Each entry is limited to a maximum of two 8.5 x 11 inch sheets. 6. Entries will be identified at the Conference by the entrant's name, not their affiliation. 7. Entries will be posted for viewing during the interactive forum. 8. The top six entrants will be given five minutes each for presentation during the final session of the Conference. 9. The Contest winner will be selected at the Contest Finals by popular vote. 10. A digital camera will be awarded to the winner. 11. If the number and quality of the entries are sufficient, more than one prize will be awarded. Last year's winner from Bill Roesch, TriQuint Semiconductor, shows `continental' residue found near the edge of a finished wafer.


CS MANTECH tradition is to formally recognize the authors of the best paper and best student paper of the previous conference, as determined from the conference attendee votes tallied from your feedback forms. These awards will be presented during the conference introductions on Tuesday, April 12th. The authors of the Best Paper receive the He Bong Kim award, named in honor of Dr. He Bong Kim, the founder of the International Conference on Compound Semiconductor Manufacturing Technology. The He Bong Kim award winner for the 2004 Conference is Karlheinz Bock, and co-authors J. Wolf, and H. Reichl, at the

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Fraunhofer Institute for Reliability and Microintegration, for the paper "Trends in RF & Wireless Packaging". The Best Student Paper for the 2004 Conference "Junction Temperature and Thermal Resistance of Ultrafast Submicron InP/InGaAs SHBT's", was authored by Walid Hafez, Forest Dixon, and Prof. Milton Feng, at the University of Illinois. The principle student author Walid Hafez will receive a special cash award of $1000. Also, a 2004 Honorable Mention Student Paper Certificate will be awarded for the student paper "Sub 200mm T-gate Uniformity in InP HEMT Technology" authored by D. A. J. Moran, E. Boyd, F. McEwan, J. McLelland, C. R. Stanley, and I.G. Thayne, University of Glasgow.


To highlight our diversity and to demonstrate our dedication to serve all electronic and optical compound semiconductor technologies, a contest was held to establish a new logo for the CS MANTECH conference. Over 65 entries were received and the winner has been selected. The new CS MANTECH logo will be unveiled during the conference opening remarks.


The SEMI Standards meeting is scheduled for Wednesday, April 13, from 5:30 PM to 7:30 PM. The SEMI Compound Semiconductor (GaAs, InP and SiC) Committee invites MANTECH Conference attendees interested in the development of internationally approved standards for Wafer Specifications to attend this meeting. Topics being addressed are GaAs, InP, and SiC dimensions/orientations and electrical properties, Epitaxial Layer Specifications, and Non-Destructive Test Methods. Based in San Jose, CA, SEMI is an international trade association serving more than 2,400 companies participating in the semiconductor and flat panel display equipment and materials markets. SEMI maintains offices in Brussels, Moscow, Tokyo, Seoul, Hsinchu, Beijing, Singapore, Austin, Boston and Washington, DC. For additional information, please contact: Co-Chair: Russ Kremer of Freiberger Compound Materials at 937-291-2899 or [email protected], Co-Chair: James Oliver of Northrop Grumman at 410-765-0117 or [email protected], or SEMI Standards Engineer Ian McLeod at 408-943-6996 or [email protected]

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Conference Chair Jim Sewell, Air Force Research Laboratory Secretary Jim Crites, M/A-COM, Inc. Treasurer Scott Davis, Sumitomo Electric Publications and Technical Program Chair Debora Green, IQE, Inc. Registration and Local Arrangements Chair George Henry, Northrop Grumman Electronic Systems Workshop Chair Marty Brophy, TriQuint Semiconductor Publicity Chair Keith Evans, Kyma Technologies, Inc. Exhibits Chair Michelle Bourke, Surface Technology Systems Web Chair Mike Barsky, Northrop Grumman Space Technology University Liaison Milton Feng, University of Illinois Local Arrangements Vice-Chair Mary Young, MetroPhotonics Sponsorship Mariam Sadaka, Freescale Semiconductor Executive Advisory Board Chun-Lim Lau, Booz Allen Hamilton Bob Surridge, Gain Microwave Corporation Joe Pellegrino, Army Night Vision Laboratory Executive Committee Members Etienne Delhaye, Philips Semiconductors Monte Drinkwine, M/A-COM, Inc. Tamotsu Kimura, OKI Optical Components Yohei Otoki, Hitachi Cable Ltd. Chairman Emeritus He Bong Kim, GaAstronics, Inc. Conference Management Lucky Gold Co. MANTECH Accountant Lucky Leong, Certified Public Accountant MANTECH Support Lynn Fincher, Webmaster Margaret Doyle, Executive Assistant

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Jon Abrokwah, Freescale Semiconductor Kamal Alavi, Raytheon RF Components John Almerico, Tegal Corporation Hani Badawi, AXT, Inc. Zaher Bardai, Raytheon Doug Barlage, North Carolina State University John Blevins, Air Force Research Laboratory Karlheinz Bock, Fraunhofer Institute Karim Boutros, Rockwell Scientific Paul Cooke, EMCORE Corporation Bill Delaney, RF Micro Devices Celicia Della-Morrow, Sumika Electronic Materials, Inc. Patrick Fowler, Anadigics, Inc. Mike Fresina, RF Micro Devices Remis Gaska, Sensor Electronic Technology Allen Hanson, Nitronex Corporation Dick Hockett, Charles Evans & Associates Maria Huffman, Agilent Yung-Chung Kao, IntelliEPI Heather Knoedler, Skyworks Solutions Inc. Russell Kremer, Freiberger Compound Materials U.S.A. Judy Kronwasser, NOVASiC Kristie Leiser, Intel Steve Mahon, TriQuint Semiconductor John Martinez, Sandia National Laboratories Neal Mellen, TDK Miro Micovic, HRL Alan Mills, III-Vs Review Eizo Mitani, Eudyna Devices USA, Inc. Yorito Ota, Matsushita Electric Industrial Co., Ltd. Noren Pan, Microlink Devices Tim Phillips, QinetiQ, Ltd.. Karen Renaldo, Northrop Grumman Keith Salzman, TriQuint Semiconductor Texas Scott Sheppard, CREE, Inc. Marc Sherwin, Northrop Grumman Electronic Systems Andy Souzis, II-VI, Inc. Mike Sun, Skyworks Solutions, Inc. Oded Tal, MAX International Engineering Group Zhuang Tang, WJ Communications, Inc. Julien Thuret, Picogiga Der-Wei Tu, Win Seminconductor John Varesi, U.S. Army Night Vision Laboratory Dave Via, Air Force Research Laboratory David Wang, Global Communication Semiconductors Roger Welser, Kopin Corporation Russ Westerman, Unaxis Dennis Williams, Fairchild Semiconductor Mark Wilson, Freescale Semicondutor

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WORKSHOP Chair: Marty Brophy, TriQuint Semiconductor 8:00 AM 8:15 AM 8:15 AM 8:15 AM WELCOME / INTRODUCTIONS PROCESS: Photolithography Peter Meng, WIN Semiconductor NETWORKS: PANs, LANs, and MANs I Prof. Jing Ma, Univ. of New Orleans CELLPHONE: Cellphone Standards Prof. Sam Huang, Univ. of New Orleans BREAK PROCESS: Metal and Dielectric Deposition Steve Mahon, TriQuint Semiconductor NETWORKS: PANs, LANs, and MANs II Prof. Jing Ma, Univ. of New Orleans CELLPHONE: Receivers and Filters Prof. Sam Huang, Univ. of New Orleans WORKSHOP LUNCH and LECTURE Prof. Michael Mizell-Nelson, Univ. of New Orleans PROCESS: Wet and Dry Etching Pat Fowler, Anadigics BUSINESS: Accounting for Engineers Prof. Jaquetta Clemons, Tulane Univ. CELLPHONE: Cellphone Power Amps Julien Thuret, PigoGiga BREAK PROCESS: Backside Processing Heather Knoedler, Skyworks Solutions BUSINESS: Fab Logistics Lee Hudgins, RF Micro Devices CELLPHONE: Cellphone Switches Domingo Farias, TriQuint Semiconductor WORKSHOP CLOSE EXHIBITS RECEPTION

10:00 AM 10:15 AM

10:15 AM 10:15 AM

12:00 PM

1:30 PM 1:30 PM 1:30 PM

3:15 PM 3:30 PM 3:30 PM 3:30 PM

5:15 PM 6:00 PM

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Tuesday, April 12

8:00 AM Welcoming Ceremonies Jim Sewell, Air Force Research Laboratory Conference Chair Conference Awards Joe Pellegrino, Army Night Vision Laboratory Executive Advisor, Past Conference Chair Technical Program Highlights Debora Green, IQE, Inc. Technical Program Chair

8:10 AM

8:20 AM

SESSION 1: PLENARY Chair: Debora Green, IQE, Inc. 8:30 AM Invited Presentation Trends and Opportunities for Gallium Arsenide Semiconductors in Handsets Paul Augustine, General Manager, Nokia Product Line Director, RF Micro Devices Invited Presentation Wide Bandgap Semiconductor Devices and MMICs for Microwave and MillimeterWave Applications: A DARPA Perspective Mark Rosker, Program Manager, DARPA/MTO Invited Presentation Will GaAs Survive for Wireless PA's? Chuck Weitzel, Freescale Semiconductor BREAK

9:00 AM

9:30 AM

10:00 AM

SESSION 1: PLENARY, continued Chair: Debora Green, IQE, Inc 10:30 AM Invited Presentation Moving Past the Hype: Real Opportunities for Wideband Gap Compound Semiconductors in RF Power Markets Sean McGrath, Philips Semiconductors

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11:00 AM

Invited Presentation The Compound Semiconductor Technology Roadmap Embedded in the 2003 ITRS: Implications for the MANTECH Community Herbert Bennett, National Institute of Standards and Technology; Julio Costa, RF Micro Devices; Anthony Immorlica, Jr., BAE Systems; Chuck Weitzel, Freescale Semiconductor Invited Presentation Who Will be Left Standing in the Compound Semiconductor Arena, and Why: An Overview of Business for the Various Market Segments that the Compound Semiconductor Industry Participates in. Asif Anwar, Strategy Analytics EXHIBITS LUNCHEON

11:30 AM

12:00 PM

SESSION 2: FET's and HEMT's Chair: Keith Salzman, TriQuint Semiconductor 1:40 PM Production Ready Ultra High Breakdown 6" pHEMT Technology C.-H.Chen, C.-G.Yuan, Y. Y.Hsieh, T. J. Yeh, Y.-C.Wang, J. Liu, S. Murad, R. Jos, R. Schook, J. de Beer, F. Bontekoe*, Win Semiconductors Corp. and, *Philips Semiconductors 0.15um Power pHEMT Manufacturing Technology for Ka- and Q- Band MMIC Power Amplifiers S. Nayak, M.-Y. Kao, A. Bross, S. Chen, Q. Wang, S. Hillyard, A. Ketterson, K. Decker, J. Delaney, K. Salzman, TriQuint Semiconductor High Frequency Power Metamorphic HEMT C. S. Whelan, K. Herrick, J. Laroche, K. W. Brown, F. Rose, Y. Zhang, P. Balas, R. E. Leoni III, W. E. Hoke, S. Lichwala, J. Kotce, T. E. Kazior, Raytheon RF Components

2:00 PM

2:20 PM

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2:40 PM

Development of L-band 28V Operation GaAs FET and Optimization for Mass Production H. Haematsu, T. Igarashi, F. Yamaki, A. Nitta, K. Inoue, and H. Kawata, Eudyna Devices, Inc. Stepper Based Sub-0.25µm Process for mm-Wave Application M. F. O'Keefe, J. G. E. Mayock, D. M. Brookbanks, J. McMonagle, J. S. Atherton, Filtronic ICS BREAK

3:00 PM

3:20 PM

SESSION 3: RELIABILITY & TEST Chair: Roger Welser, Kopin Corporation 3:50 PM Invited Presentation Outstanding Issues in Compound Semiconductor Reliability William J. Roesch, TriQuint Semiconductor, Inc. Reliability Assessment of Production SiC MESFETs A. Ward, S. T. Allen, and J. Palmour, Cree, Inc. Reliability Evaluation of InGaAsN for PA Handset Applications L. Rushing, P. Zampardi, M. Sun, R. Welser*, Skyworks Solutions, Inc. and *Kopin Corporation In-line RF Device Testing for Monitoring a High Volume GaAs HBT Production Line C. Cismaru, H. Banbrook, P. J. Zampardi, J. Li, J. W. Penney, C. McGuire*, Skyworks Solutions, Inc. and *PrivaSys, Inc. INTERNATIONAL RECEPTION

4:20 PM

4:40 PM

5:00 PM

7:00 PM

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Wednesday, April 13

SESSION 4: MATERIALS Chair: Yohei Otoki, Hitachi Cable, Ltd. 8:00 AM 4-inch GaN HEMT Epiwafers with Less Wafer Bow Y. Kohji, T. Tanaka, T. Meguro, Y. Otoki, Hitachi Cable, Ltd. Gate Leakage Current of AlGaN/GaN HEMTs Device Influenced by Substrate Defects K. Matsushita, H. Sakurai, K. Takagi, H. Kawasaki, Y. Takada, Y. Tsuda, Toshiba Corporation Manufacturing Engineering wafers for GaN RF Power Applications P. Bove, H. Lahreche, D. Da Cruz, F. Letertre**, B. Faure**, A. Boussagol**, Picogiga Int'l SAS, **Soitec S. A. Investigation of Semi-Insulating SiC Wafers Using Contactless Topographic and Temperature-Dependent Resistivity Analysis W. Jantz, S. Müller and R. Stibal, Semimap Scientific Instruments Evaluation of 4" InP Substrates for EpiReady Production MBE Growth J. M. Fastenau, W. K. Liu, D. Lubyshev, X.M. Fang, Y. Wu, C. Doss, IQE, Inc.

8:20 AM

8:40 AM

9:00 AM

9:20 AM

SESSION 5: PROCESS I ­ BACK-END-OF-THELINE (BEOL) PROCESS Chair: Dennis Williams, Fairchild Semiconductor 8:00 AM Cross-functional Optimization of Backside Metal Adhesion to GaAs H. Knoedler, A. Alleman, D. Anderson, E. Babcock, P. Bal, S. Canale, B. Darley, N. Ebrahimi, Q. Luo, S. Mony, Y. Resci, J. Riege, J. Sawyer, J. Singletary, S. Tiku, D. Zapp, Skyworks Solutions, Inc.

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8:20 AM

A Simple Approach to Eliminate Occasional Grass Formation in ICP Backside Via Etch Process J. Zhou, D. Hou, C. Lee, A. Ranjbari, GCS, Inc. InP Backside Via Formation Using High Etch Rate and Low Temperature HIBased ICP Etching K. Kotani, T. Kawasaki, S. Yaegassi, and H. Yano, Eudyna Devices, Inc. Resistance and Inductance of ThroughWafer Vias: Models, Measurement, and Scaling M. J. Brophy, T. Saeger, and W. Mickanin*, TriQuint Semiconductor and *Consultant Investigation of Reliability Failures and Process Improvements to a Source-Via Process J. Campbell, J. Fender, C. Becker, T. Daly, K. Costello, Freescale Semiconductor BREAK

8:40 AM

9:00 AM

9:20 AM

9:40 AM

SESSION 6: OPTOELECTRONICS Chair: Marc Sherwin, Northrop Grumman Electronic Systems 10:00 AM Invited Presentation LED Technology Trends Dieter Eissler, S. Illek, G. Bogner, Osram Opto Semiconductors Invited Presentation A Review of Night Imaging Technologies Innovations for the Visible to Long Wave Infrared Systems Joe Pellegrino, E. Bender, R. Stefanik, R. Draper, N. Supola, J. Campbell, P. Perconti, U. S. Army RDECOM CERDEC Night Vision & Electronic Sensors Directorate Yield Improvement of Wafer Mapping the Polarization Correction in InP/InGaAsP WDM Optical Power Monitors D. P. Masson, F. Wu, MetroPhotonics, Inc.

10:30 AM

11:00 AM

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11:20 AM

AlInGaN-based Deep Ultraviolet LED Technology R. Gaska, Sensor Electronic Technology, Inc.

SESSION 7: PROCESS II - DIELECTRICS & DRY ETCH Chair: Celecia Della-Morrow, Sumika Electronic Materials, Inc. 10:00 AM Oxygen Plasma Damage Study on InGaP/GaAs HBT S. O'Neil, C. Luo and S. Tiku, Skyworks Solutions, Inc. Shallow Mesa Isolation of AlSb/InAs HEMT with AlGaSb Buffer Layer Using Inductively Coupled Plasma Etching P. Nam, R. Tsai, M. Lange, J. Lee, R. Grundbacher, J. Wang, C. Namba, M. Barsky, A. Gutierrez-Aitken and S. Olson, Northrop Grumman Space Technology High-Density ECR-Plasma Deposited Silicon Nitride Films for Applications in III/V-based Compound Semiconductor Devices R. E. Sah, M. Mikulla, H. Baumann*, F. Benkhelifa, R. Quay, and G. Weimann, Fraunhofer Institute for Applied Solid State Physics, and J. Goethe Universität Dense Silicon Nitride for MMIC Protection with Low Compressive Stress Grown in LF PECVD W. Chiou, B. Lee, B. Ho, Win Semiconductors Corporation Reliability Characterization of High Density MIMCAP Nitride B. N. De, M. Shokrani, Anadigics LUNCH (Attendees Choice) & EXHIBITORS' FORUM

10:20 AM

10:40 AM

11:00 AM

11:20 AM

11:40 PM

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SESSION 8: WIDE BANDGAP RF TECHNOLOGIES Chair: John Martinez, Sandia National Laboratories 1:40 PM Invited Presentation A Highly Uniform and Reliable AlGaN/GaN HEMT Junichiro Nikaido, T. Kikkawa*, S. Yokokawa, Y. Tateno, Eudyna Devices, Inc. and *Fujitsu Laboratories, Ltd. SiC MESFET and MMIC Technology Transition to Production J. W. Milligan, J. Henning, S. T. Allen, A. Ward, C. Janke, Cree, Inc. 25 Watt X-band GaN on Si MMIC D. M. Fanning, L. C. Witkowski, C. Lee, D. C. Dumka, H. Q. Tserng, P. Saunier, E. Piner*, K. Linthicum*, W. Johnson*, TriQuint Semiconductor, and* Nitronex Corporation Performance and Fabrication of GaN/AlGaN Power MMIC at 10 GHz F. Benkhelifa, R. Kiefer, S. Muller, F. van Raay, R. Quay, R. E. Sah, M. Dammann, M. Mikulla, G. Weimann, Fraunhofer Institute for Applied Solid State Physics

2:10 PM

2:30 PM

2:50 PM

SESSION 9: PACKAGING Chair: Etienne Delhaye, Philips Semiconductors 1:40 PM Invited Presentation Flip Chip Technology - Vendor Overview Mark S. Hauhe, Raytheon GaAs Integrated Passive Technology J. Abrokwah, L. Liu, S.-M. Kuo, M. Ray, D. Maurer, J. Cotronakis and M. Miller, Freescale Semiconductor, Inc. Novel Approaches For Hermetic Wafer Scale MEMS RF and GaAs Packaging R. M. Mullapudi, G. Minoague*, Hionix, Inc., and *Surfect Technologies, Inc. Handset Design Techniques at the Package and System Level M. Abdelgany, Skyworks Solutions, Inc.

2:10 PM

2:30 PM

2:50 PM

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SESSION 10: RUMP SESSIONS Chair: Oded Tal, Max International Engineering Group 3:20 PM ­ 4:50 PM 1. What do you know about GaAs and are afraid to admit? ­ a tell-all session Moderator: Paul Cooke, Emcore Where's the margin? We all want to know the answer... Moderator: Mike Barsky, Northrop Grumman Space Technology Wide Bandgap Reliability ­ Show me the data, a topic so sensitive we have two moderators to host it. Moderators: Dave Via, Air Force Research Laboratory, and Scott Sheppard, Cree, Inc. What ever happened to InP? Or in fact what, if anything, will happen to InP? Moderator: Mike Sun, Skyworks Solutions, Inc.




Thursday, April 14

SESSION 11: HBT's Chair: Noren Pan, Microlink Devices 8:00 AM Invited Presentation Market Opportunities in the Age of Seamless Mobility Bruce Bernhardt, Motorola InGaP HBT Technology Optimization for Next Generation High Performance Cellular Handset Power Amplifiers T. C. L. Wee, T. C. Tsai, J. H. Huang, W. C. Lee, Y. S. Chou, Y. C. Wang, and W. J. Ho, Win Semiconductor Corporation A Super Ruggedness InGaP/GaAs HBT for GSM Power Amplifiers Y. Yang, B. In, Y. Chen, C. Nguyen, D. Hou, J. Zhou, W. Yau, D. Wang, GCS, Inc. Student Presentation Process and Performance Improvements to Type-II GaAsSb/InP DHBTs B. F. Chu-Kung, S. C. Shen*, W. Hafez, and M. Feng. University of Illinois, and *Georgia Institute of Technology

8:30 AM

8:50 AM

9:10 AM

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9:30 AM

Thermally Optimized and Electrically Isolated Buffer Layer Study in High Volume HBT Manufacturing A. Zaman, M. Sun, W. Sun, J. Hu, N. Ebrahimi, R. Ramanathan, P. Zampardi and A. Popalzai, Skyworks Solutions, Inc.

SESSION 12: PROCESS III ­ PHOTOLITHOGRAPHY & METALLIZATION Chair: Steve Mahon, TriQuint Semiconductor 8:00 AM A High-Performance 0.13um AlGaAs/InGaAs pHEMT Process Using Sidewall Spacer Technology A. T. Ping, W. Liebl, G. Mahoney, S. Mahon, O. Berger, TriQuint Semiconductor All i-Line Lift-Off T-Gate Process and Materials M. A. Toukhy and P. Lu, AZ Electronic Materials USA Corp. Low Energy Sputter Deposition and Properties of NiCr Thin film Resistors for GaAs Integrated Circuits J. Yang, P. Miller, F. Radulescu, R. Herring, K. Avala, D. Maxwell, L. Liu, R. Morton, TriQuint Semiconductor Investigation and Elimination of Defects Seen after TiW/Au Metal Line Formation J. Fender, T. Daly, Freescale Semiconductor, Inc. Optimization of a Metal Liftoff Process in a GaAs Semiconductor Device C. Carpenter, Skyworks Solutions, Inc. BREAK

8:30 AM

8:50 AM

9:10 AM

9:30 AM

9:50 AM

SESSION 13: WIDE BANDGAP DEVICES Chair: Allen Hanson, Nitronex Corporation 10:10 AM Invited Presentation Large Area Silicon Carbide Power Devices on 3-inch Wafers and Beyond John W. Palmour, A. Agarwal, S.-H. Ryu, M. Das, J. Sumakeris, A. Powell, Cree, Inc.

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10:40 AM

A Novel Process for Reduced Dispersion Effects in AlGaN/GaN HEMTs J. Gillespie, A. Crespo, R. Fitch, G. Jessen, D. Langley, N. Moser, D. Via, M. Williams, M. Yannazzi, Air Force Research Laboratory Transfer from MHEMT to GaN HEMT Technology: Devices and Integration R. Vandersmissen, W. Ruythooren, J. Das, M. Germain, and G. Borghs, IMEC, MCP Student Presentation Investigation of Metal Contact Stacks for Submicron GaN HEMT Y. Knafo, B. Hadad, J. Kaplun*, I. Hallakoun*, I. Toledo*, G. Bunin*, T. Baksht, M. Leibovitch* and Shapira, Tel-Aviv University, and *Gal-El Issues in Scaling Production Nitride MBE Systems M. O'Steen, M. Sheldon, R. Bresnahan, T. Bird, D. W. Gotthold, Veeco Instruments, Inc.

11:00 AM

11:20 AM

11:40 AM

12:10 PM - 2:10 PM LUNCH RECEPTION & SESSION 14: INTERACTIVE FORUM Chairs: Heather Knoedler, Skyworks Solutions, Inc. Mary Young, MetroPhotonics 14.1 Student Presentation Neural Network Modeling of Anion Exchange using Reflection High-Energy Electron Diffraction Data T. Sarmiento and G. S. May, Georgia Institute of Technology 14.2 Stepper-Based Integrated Process on Wafer Pieces G. Bunin, A. Cohen-Nov, R. Ben-Or, J. Kaplun, V. Krasniansky, and L. Ortenberg, Gal-El (MMIC) 14.3 Micro-Hall Devices: A Tool for Investigating Process Dependent Noise Sources in Planar III-V Heterostructure Devices V. Mosser and A. Kerlain, Itron UTG 14.4 Advances In Processing of Compound Semiconductor Substrates C. Brubaker, M. Wimplinger, A. Malzer, P. Lindner, EV Group

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14.5 Reduction of Edge Particles on pHEMT Wafers grown by Production Molecular Beam Epitaxy C. D. Lee, P. S. Lyman, and W. E. Hoke, Raytheon RF Components 14.6 Yield Improvement of MESFET Circuits with Idd Ring-Like Pattern Y. Z. Wang, P. Fowler, Anadigics 14.7 Removal of Gold Impregnated Post-Etch Residue from Front and Backside Vias in a Single Process J. Moore, S. Luna, T. Rivers*, B. Howell*, C. Becker**, General Chemical, *TriQuint Semiconductor, and **Freescale Semiconductor 14.8 Improving Final Test Yield and Reliability through Backside Final Outgoing Inspection J. Campbell, C. Becker, N. Liggins, Freescale Semiconductor 14.9 Study of Thermal Coupling Effect in GaAs Heterojunction Bipolar Transistors by Using Simple Current Mirror Circuit P. Dai, P. Zampardi, K. Kwok, C. Cismaru and R. Ramanathan, Skyworks Solutions, Inc. 14.10 Silicon Nitride Surface Preparation to Prevent Photoresist Blister Defects C. Cheung, K. Luo, D. Li, P. Ngo, L. Dang, J. Uyeda, J. Wang, M. Barsky, Northrop Grumman Space Technology 14.11 Method for Determining Substrate Via Yield M. Meeder, M. Fresina, C. Whitman, RF Micro Devices, Inc. 14.12 Advanced Low-k Polymer Dielectrics Platform for RF Applications M. Ito, K. Tsuruoka, S. Yokotsuka, Asahi Glass Co, Ltd. Research Center 14.13 Student Presentation Re-Configurable MMIC: Yield Improvement During On-Wafer Testing M. Vazokha, S. Solodky*, R. Ben-Or, J. Kaplun*, M. Leibovitch* and Y. Shapira, Tel-Aviv University, and Gal-El (MMIC)

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14.14 Student Presentation Experimental Investigation of DC-RF Dispersion in AlGaN/GaN HFET's Using Pulsed I-V and Time-Domain Waveform Measurements P. McGovern, P. J. Tasker, J. Powell*, K. P. Hilton*, R. S. Balmer*, T. Martin*, M. J. Uren*, Cardiff University, and QinetiQ Ltd. 14.15 BCB-bridged Ka-band MMICs using In0.5Al0.5As/In0.5Ga0.5As Metamorphic HEMTs C.-K. Lin, W.-K. Wang and Y.-J.Chan, National Central University 14.16 GaAs Wafer Dicing Using the Water Jet Guided Laser D. Perrottet, S. Amorosi, B. Richerzhagen and J. Manley, Synova 14.17 Zero Defect Methodology: Is the GaAs Industry Ready J. Campbell, Freescale Semiconductor 14.18 InSb-based Quantum Well Transistors for UltraHigh Speed, Low Power Applications T. Ashley, A. R. Barnes, L. Buckle, S. Datta*, A. B. Dean, M. T. Emeny, M. Fearn, D. G. Hayes, K. P. Hilton, R. Jefferies, T. Martin, K. J. Nash, T. J. Phillips, W. H. Tang, R. Chau*, QinetiQ, and * Intel Corporation 14.19 Student Presentation Direct Monitoring of the Hot-Carrier Accumulated Charge in GaN HEMT and PHEMT Devices A. Stopel, O. Katz, A. Khramtsov, S. Solodky*, T. Baksht*, Y. Knafo, M. Leibovitch*, Y. Shapira, TelAviv University and *Gal-El (MMIC) 14.20 Characterization of Electrostatic Carrier Substrates to be Used as a Support for Thin Semiconductor Wafers K. Bock, M. Bleier, C. Landesberger, Fraunhofer Institute for Reliability and Microintegration 14.21 Student Presentation Study of 1/f and 1/f2 for InP SHBT and DHBT K. Cimino, Y.-M. Hsin*, S. C. Shen**, M. Feng, University of Illinois, *National Central University, and **Georgia Institute of Technology

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14.22 Sudent Presentation Edge Defined Lithography for Nano-scale III-N Field Effect Transistors J. P. Long, C. Zeng, D. W. Barlage, M. A. L. Johnson, North Carolina State University 14.23 The Effects of HBr on the ICP Processing of HgCdTe A. J. Stoltz, E. P. G. Smith*, J. D. Benson, J. B. Varesi, G. M. Venzor*, M. Devre**, J. I. Shin**, L. A. Almeida, M. Martinka, A. W. Kaleczyc, P. R. Boyd***, J. H. Dinan, U.S. Army RDECOM CERDEC Night Vision and Electronic Sensors Directorate, *Raytheon Vision Systems, Inc., **Unaxis USA, Inc., and ***U.S. Army Research Laboratory 14.24 Student Presentation HBr-Based Gas Cluster Ion Beam Smoothing as a Final Polish for the Production of MBE-EpiReady GaSb Wafers S. R. Vangala, L. P. Allen*, V. DiFilippo**, C. Santeufemio, J. Li, X. Qian, Y. Park***, B. Zhu, K. Krishnaswami, G. Dallas*, D. Bliss****, H. Dauplaise****, and W. D. Goodhue, University of Massachusetts, *Galaxy Compound Semiconductors, Inc., ** Epion Corporation,*** Inje University, and ****Air Force Research Laboratory 14.25 Bulk Ammonia Supply Solutions for LED Manufacturing T. Conway, Air Products 2:10 PM Chair: 2:50 PM UGLY PICTURE CONTEST FINALS Dave Via, Air Force Research Laboratory END OF CONFERENCE Have a safe trip home

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SESSION 1: PLENARY Chair: Debora Green, IQE, Inc. Where is the compound semiconductor market heading? What will be the future products and chip requirements? Which technologies will continue to face downward pressures in market share and which will expand? What new technologies will emerge and capture market share? What critical factors will determine market share gains? What are the projected technology, product, market lifetimes? What other questions should be discussed to address our changing markets? The invited speakers for the Plenary Session will be addressing questions such as these and will highlight specific market segments and roadmap opportunities. The keynote talk, presented by Paul Augustine, General Manager, Nokia Product Line Director, RF Micro Devices, will review factors which have contributed to GaAs success in the power amplifier and other market segments, and Paul will also review future handset trends and opportunities. The second plenary presentation, by Mark Rosker, Program Manager, DARPA/MTO, will provide an overview of GaN technologies and market opportunities. The third plenary talk, presented by Chuck Weitzel, Freescale Semiconductor, will provide a very informative overview of performance comparisons for GaAs, SiGe, LDMOS, GaN and related technologies. Following a morning break, the fourth plenary presentation, given by Sean McGrath, Philips Semiconductors, BL-Cellular Systems, will further review current status of semiconductor technologies, with a focus on benchmarking of achievements, and relative market opportunities, in wide bandgap technologies. The fifth presentation, given by Herbert Bennett, National Institute of Standards and Technology, will include selected highlights on compound semiconductors from the perspective of the 2003 International Technology Roadmap for Semiconductors (ITRS). Herbert's coauthors for this paper are Julio Costa, RF Micro Devices, Anthony Immorlica, Jr., BAE Systems, and Chuck Weitzel, Freescale Semiconductor. The final paper in this session, presented by Asif Anwar, Strategy Analytics, will provide us with an overview of the vertical supply chain, from bulk substrates to GaAs devices, and will discuss critical factors that are forecast to drive market share gains for segments of the compound semiconductor market.

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SESSION 2: FET's and HEMT's Chair: Keith Salzman, TriQuint Semiconductor This session consists of five contributed papers on GaAs FET, pHEMT and mHEMT manufacturing processes from companies in three different countries. The papers describe devices optimized for a variety of applications ­ linearity at high output power; high power at high frequency; high power added efficiency at even higher frequency; and high voltage, very high power for low frequency applications. The first paper, from WIN, describes a 6-inch pHEMT process with improved 1/f noise and high breakdown voltage suitable for CATV PA applications. The second paper, from TriQuint, presents state-of-the-art results for a device optimized for high power Ka and Q band applications. In the third paper, Raytheon authors present the results of device engineering efforts to achieve state-of-the-art MMIC performance at 90GHz with a high gain, high power added efficiency mHEMT device. Eudyna engineers present results in the fourth paper, of a development effort to produce a 28V, 250W GaAs FET for base station applications to compete with LDMOS. The fifth paper, from Filtronics, describes fabrication of 0.25um pHEMT devices using DUV lithography for use in power amplifier MMICs for highperformance, low cost mm-wave applications. SESSION 3: RELIABILITY & TEST Chair: Roger Welser, Kopin Corporation William Roesch, a pillar in the compound semiconductor reliability community, leads off the Reliability & Test session with an invited presentation. After briefly reviewing what we have learned over the past twenty years, this paper will outline several outstanding issues in need of additional work. Bill ends his talk with a challenge to the compound semiconductor industry to formulate new strategies to beat silicon. The next two talks in this session report on the reliability of emerging technologies. The first from Cree assesses the reliability of SiC MESFETs. The second describes the reliability testing at Skyworks on dilute-nitride HBTs with reduced turn-on voltages. The session ends with a description of a new in-line RF testing methodology, also from Skyworks. SESSION 4: MATERIALS Chair: Yohei Otoki, Hitachi Cable, Ltd This session covers newly developed growth and characterization technologies of epitaxial materials mainly related to wide bandgap GaN and SiC, and to InP. By

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thinning the epi-layer thickness with good crystal quality, Hitachi Cable has tried to solve the bending problem of GaN-HEMT wafer on 4-inch Sapphire substrates for high yield mass-production. Toshiba will clarify the relation between the defects of GaN-HEMT epitaxial wafer observed by the surface analyzer and the device performance in detail. This result is very useful to accelerate the development of GaN-HEMT. Picogiga will present the latest GaN-HEMT on Si grown by MBE, showing the possibility to go to mass-production using this technique. Semimap Scientific Instruments will show a beautiful resistivity map of a wafer and its temperature dependence in semi-insulating SiC, which has very high value up to 1E12 ohm-cm, by contactless measurement method. Finally, IQE, aiming at mass-production of 4" InP-HBTs epi-wafers will present their findings of the effect of defects in InP substrates from various vendors and defects after epi-growth, showing the possibility of "epiready" process. SESSION 5: PROCESS I: BACK-END-OF-THE-LINE (BEOL) PROCESS Chair: Dennis Williams, Fairchild Semiconductor Sessions devoted to back side processing at the MANTECH conference have always been a forum for the discussion of real, practical, and exceptionally useful manufacturing methods and techniques. Session 5 is no exception and continues this fine tradition. Covered here are diverse topics from five industry leading companies spanning a range of manufacturing interest from throughvia etching to back side metal adhesion to the broad use of the design of experiments across many facets of back end fabrication. We begin with a discussion of a cross functional team effort to optimize several key back end processes. Skyworks Solutions, Inc. gathered in-house experts from fab, back end processing, and their Mexicali assembly plant to optimize back metal adhesion, wafer thinning, surface pre-treatment, metallization, UV tape exposure and storage, and pick-and-place. Next, throughwafer-vias take center stage with three presentations. The first is by GCS, Inc. on a process issue common in the industry; the formation of "grass" during through-via etching of gallium arsenide and resulting yield impact, and GCS' approach to the solution. Next, InP through-via etching is addressed by Eudyna Devices, Inc. They report on the use of a novel hydrogen iodide gas chemistry combined with cost effective and temperature resistant dry film resist patterning to achieve a uniform and high yield process for InP wafer etching. TriQuint Semiconductor follows with modeling, measurement, and scaling of

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through-vias as a means to predict the performance and yield impact of varying the size and morphology of via structures. We close the session with an investigation of some actual reliability failures observed in through-vias and the process improvements devised to address them. This last presentation by perennial MANTECH contributors Freescale Semiconductor is a "must see". The hallmark of this conference is the willingness of contributing organizations to reveal real issues that all manufacturers deal with and to discuss them frankly in order to advance the industry at large, a feature only to be found at MANTECH. SESSION 6: OPTOELECTRONICS Chair: Marc Sherwin, Northrop Electronic Systems


This session focuses on current and future application of compound semiconductors to the optical device field. The first invited paper, from Osram, addresses trends in the LED market and the corresponding consequences to the LED technical roadmap. The second invited paper, from the U.S. Army RDECOM CERDEC Night Vision & Electronic Sensor Directorate, discusses the application of GaAs, HgCdTe and associated components to the multigenerational development of night imaging technologies. The third paper of the session, from MetroPhotonics Inc., describes a closed loop processing technology to improve yield in the manufacture of InP/InGaAsP WDM Optical Power Monitors. The final paper of the session, from Sensor Electronic Technology Inc., will discuss the technology of deep ultraviolet LEDs based on AlInGaN. SESSION 7: PROCESS II ­ DIELECTRICS & DRY ETCH Chair: Celicia Della-Morrow, Sumika Electronic Materials, Inc. The dry etch/dielectric deposition processing session begins with a paper from Skyworks discussing the effect of plasma damage on InGaP HBT reliability. Their focus is the determination of device reliability with small changes in standard DC bias parameters. Our next paper from Northrop Grumman discusses the design of a unique inductively coupled plasma etch to create mesa isolation in an AlSb/InAs HEMT device. The next three papers focus on silicon nitride deposition. Fraunhofer Institute, investigates the development of a high density ECR plasma deposited silicon nitride film for GaN HEMT devices. WIN Semiconductor details their development of a low frequency PECVD film with low compressive stress for

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MMIC passivation with highly-accelerated temperature and humidity stress testing as their figure of merit. The last paper in this session will be presented by Anadigics and discusses their silicon nitride capacitor testing, the methodology used to evaluate their different DOEs as well as the results. Please join us at this important process session. SESSION 8: WIDE BANDGAP RF TECHNOLOGIES Chair: John Martinez, Sandia National Laboratories The unique and desirable properties available from wide bandgap semiconductors continue to attract the attention of device researchers and manufacturers, particularly for applications in microwave power circuits. Their exceptional combination of high electric breakdown fields, electron saturation velocities, and thermal conductivity as substrates make this class of semiconductor uniquely suited to high voltage/high power environments. Groups all over the world have regularly been showing HEMTs with unprecedented power densities that continue to climb, but these results have largely been only for discrete devices with relatively small gate peripheries ­ due in part to repeatability and uniformity issues. The papers of this session show how some groups have now taken the next steps with a variety of approaches, improving repeatability and reliability and extending wide bandgap technologies to MMICs. The first of the four papers in this session, an invited paper from Eudyna Devices and Fujitsu Laboratories, addresses the uniformity and reliability issues by using a surface-charge-control structure composed of a doped cap layer and an optimized Si3N4 passivation layer, substantially improving its manufacturability. In the first of the wide bandgap MMIC papers, Cree describes the transition to full production capability of their SiC MESFET and MMIC technology, capable of more than 80 W of power, incorporating thinfilm resistors, high-voltage MIM capacitors, and substrate vias in both stock parts and as a foundry service. A second MMIC paper, details TriQuint's demonstration of the first X-band, GaN-on-Si MMIC amplifier, which achieved pulsed output power of 25 W with 17.3 dB gain and 23.8% PAE at 8.5 GHz and greater than 20 W output power over the 8.5 GHz ­ 10.5 GHz band. The final MMIC paper is from the Fraunhofer Institute and describes their 10 GHz GaN/AlGaN (on SiC) power MMIC process and a demonstration amplifier circuit with pulsed output power of 13.4 W, linear gain of 20 dB and PAE of 25% at 10 GHz.

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SESSION 9: PACKAGING Chair: Etienne Delhaye, Philips Semiconductors Packaging is playing an increasingly important role in the semiconductor industry. The race towards miniaturization creates a strong demand for improved, low cost, and reliable packaging technologies, while high power RF applications create significant issues to solve. Trends and novelties in the area are reviewed in this session. The first paper, an invited presentation by Mark S. Hauhe of Raytheon reviews the progress and trends in Flip Chip assembly. This technique is increasingly used in several applications and provides significant miniaturization advantage, while raising challenging technical issues. In the second paper, an integrated passive technology on low grade GaAs substrates is presented by Jon Abrokwah of Freescale Semiconductor. Packing most (or all) of the passive components required by the applications in a minimal number of square millimeters is a challenge towards ultimate miniaturization, while raising challenges on cost. These aspects will be discussed during the presentation. The next paper in this session discusses the wafer scale packaging technique for MEMS devices. Achieving hermetic assembly is an important aspect for MEMS reliability, which is discussed in the paper. To conclude the session, M. Abdelgany of Skyworks Solutions, Inc. presents a package-level integration solution leading to one-case integration of both WLAN and GPRS radios. Benefits of this approach are discussed and perspectives are given. SESSION 10: RUMP SESSIONS Chair: Oded Tal, Max International Engineering Group The informal rump sessions are always popular and entertaining, not only because of the free beer and snacks, but mostly due to the free and open exchange of ideas and wild opinions. This year we have four rump sessions that are guaranteed to make you interested, or annoyed, or maybe even both: 1. What do you know about GaAs and are afraid to admit? ­ a tell-all session Paul Cooke, Emcore Where's the margin? We all want to know the answer... Mike Barsky, Northrop Grumman Space Technology Wide Bandgap Reliability ­ Show me the data, a topic so sensitive we have two moderators to host it.



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Dave Via, Air Force Research Laboratory and Scott Sheppard, Cree, Inc. What ever happened to InP? Or in fact what, if anything, will happen to InP? Mike Sun, Skyworks Solutions, Inc.

We urge everyone with an opinion - as if you can be in our industry without forming one on these topics - to pick the rump session of your choice and join us for some opinionated, open discussions - the kind you can only have when mixing major industry players, sometimes of opposing sides. SESSION 11: HBT's Chair: Noren Pan, Microlink Devices The HBT device section consists of one invited talk and four contributed presentations. The first talk is an invited talk by B. Bernhardt of Motorola. Bruce will provide an overview of the various wireless communication protocols that are being used today. The concept of seamless mobility is emerging upon us where the integration of wired and wireless networks is occurring. This integration provides new opportunities for IC manufacturers and communication device makers to provide novel and cost effective solutions. The challenge is to provide additional functionality while reducing size and cost of the total solution. The second paper by Wee et. al. of Win Semiconductor shows that an optimum InGaP HBT device structure can be used for both GSM and CDMA applications. While ruggedness is one of the most critical parameters for GSM applications, linearity and power added efficiency are most important in CDMA applications. Through the optimization of device structure, the key performance for both GSM and CDMA was simultaneously achieved. The third paper by Y. Yang et. al. of GCS describes high ruggedness PA using InGaP HBT technology. High ruggedness under a severe load mismatch was investigated by optimizing the device epitaxial layer structure, device size, and process. High ruggedness was achieved at 25:1 VSWR (Vce = 5 V), which is the highest ever reported for InGaP PA. The fourth paper by B. C. Kung (student paper) of the University of Illinois describes high frequency performance of InP/GaAsSb HBT's. By reducing the base and collector thickness, an Ft of 358 GHz and an Fmax of 279 GHz were achieved. The high Fmax was achieved through the optimization of the etching profiles. The fifth paper by Zaman et. al. of Skyworks provides an investigation of the isolation leakage current in HBT. Device isolation is a cause of yield's failure in the high

38 2005 Compound Semiconductor MANTECH

volume manufacturing. To realize reproducible low leakage currents, an AlGaAs buffer layer with the appropriate thickness was inserted at the substrate/epitaxial interface. A thin AlGaAs buffer layer was found to be effective without increasing the thermal resistance. SESSION 12: PROCESS III ­ PHOTOLITHOGRAPY & METALLIZATION Chair: Steve Mahon, TriQuint Semiconductor One industry goal is to arrive at stunning processing techniques in the quest for high performance processes with economical cost structures. Advanced silicon processes continue to advance with the question changing from "Who can provide the performance?" to "The performance is there, who provides the lowest cost solution?". With papers from TriQuint, Freescale, AZ, and Skyworks, you will see some of these techniques from the front lines of the compound semiconductor industry. This session provides insights into the areas of shrinking transistor dimensions, thin film resistors, and defect density reduction. The ability to do 0.13um to 0.25um Tgate features with I-line lithography show the sprit of advancing technology without requiring costly approaches such as e-beam or DUV lithography. You will be exposed to techniques to achieve high precision, low TCR thin film resistors using standard PVD equipment. For the grand finale, there are two chronicles on defect reduction and process optimization for both liftoff and electroplate metallization processes because nothing helps costs like high yields. The entire session shows that as price pressures on advanced RF technologies continue, there are innovative techniques emerging to continue the battle to maintain margins, even as frequencies expand into the mm-wave regime. SESSION 13: WIDE BANDGAP DEVICES Chair: Allen Hanson, Nitronex Corporation This session focuses on the rapidly maturing field of wide bandgap devices. The first talk, an invited presentation from CREE, discusses the latest advances in the manufacture of and future prospects for SiC power devices. This technology is beginning to displace silicon for many applications like switch-mode power supplies, and is showing significant promise for many emerging applications. Next, the Air Force Research Laboratory will discuss a silicon nitride passivation process incorporating a post deposition anneal and its effect on dispersion in AlGaN/GaN HFETs. After this, IMEC will discuss their GaN-on-sapphire HEMT technology including use of a

39 2005 Compound Semiconductor MANTECH

thin-film multilayer, multichip module technology for integration and packaging of these devices. A student paper from Tel-Aviv University in collaboration with GalEl will discuss the annealing and leakage characteristics of Ni vs. TaN Schottky contacts to AlGaN/GaN HEMTs. We conclude the session with a paper from Veeco on the industry's first high-volume (multi-100mm wafer) MBE system for the growth of GaN-based materials and the challenges they faced in scaling this technology from R&D to production-ready systems. SESSION 14: INTERACTIVE FORUM Chairs: Heather Knoedler, Skyworks Networks, Inc. Mary Young, MetroPhotonics One of the primary goals of MANTECH has always been the promotion of free and open information exchange among industry participants. The Interactive Forum has been a distinctive conference fixture since 1994 and was designed specifically to facilitate face-to-face meetings, lively discussion and energetic debate. During the Interactive Forum, authors of all presented papers will be available to answer questions and discuss their results in more detail. In addition, there are a number of papers that will be made available during the Interactive Forum only. This is your opportunity to view and discuss these papers with the authors. Please note that authors from the `Interactive Forum only' papers will be available throughout the entire session. These papers are listed in session 14 in the Conference Digest and in this Advance Program. Authors from Sessions 1 through 6 will be available during the first hour, and those from sessions 7 through 13 (excluding session 10 rump sessions) will be available during the second hour. The 2005 International Conference on Compound Semiconductor Manufacturing Technology encourages all to attend, enjoy the lunch reception, and take advantage of this unique opportunity!

40 2005 Compound Semiconductor MANTECH

Special Thanks to our 2004 Exhibitors

Accent Optical Technologies Aixtron ASML AXT BOC EDWARDS Brewer Science Candela Instruments Centrotherm GmbH Clariant Corp., AZ Electronic Material Compound Semiconductor Magazine EMCORE EpiWorks, Inc. EV GROUP Freiberger Compound Materials GE Advanced Ceramics General Chemical Performance Products Hitachi Cable, Ltd. III-V's Review II-VI, Inc., Wide Bandgap Materials Implant Sciences Corporation Integrated Systems Engineering Intelligent Epitaxy Technology, Inc. IQE, Inc. Johnson Matthey Kopin Corporation k-Space Associates, Inc. Lake Shore Cryotronics, Inc. Lehighton Electronics, Inc. M/A-Com, Inc. MAX International Engineering Group MBE Technology Pte. Ltd. Micro Magazine Nikko Materials Oberlin Filter Company Picogiga USA, Inc. Proton Energy Systems, Inc. QSSE Riber SAES Pure Gas, Inc. Schwarzkopf Technologies Corporation Sensor Electronic Technology, Inc. Sigmatech Inc. Sumika Electronic Materials, Inc. Sumitomo Electric Semiconductor Materials Surface Technology Systems. plc Synova SA TDK R+D Corporation Tegal Corporation The Industrial Physicist Trikon Technologies, Inc. Vacuum Engineering & Materials Co. Unaxis Semiconductors Veeco Instruments Visual Photonics Epitaxy Co., Ltd. Wafer World, Inc. XPERT SEMICONDUCTOR

41 2005 Compound Semiconductor MANTECH


2005 International Conference on Compound Semiconductor Manufacturing Technology April 11 ­ April 14, 2005 Sheraton New Orleans 500 Canal Street, New Orleans, Louisiana 70130


On or before Mar. 15 Full Conference Registration $525.00 Student Conference Registration $125.00 Government Conference Registration $525.00 One-Day Conference Registration $300.00 Workshop Registration $275.00 Government Workshop Registration $275.00 After Mar. 15 $625.00 $125.00 $525.00 $300.00 $375.00 $275.00

Payment of the full, student, or government conference registration fee includes one copy of the printed Conference Digest, one copy of the Conference Digest on CD, and admission to all sessions and the exhibits. It also includes the International Reception, Exhibits Reception, Exhibit Luncheon, Interactive Forum Lunch Reception, continental breakfasts and refreshment breaks. Additional copies of the Conference Digest may be purchased at $140.00 each. Additional copies of the Conference Digest on CD may be purchased for $50.00 each. The one-day registration includes admission to all sessions for that day, admission to the Exhibit Hall, continental breakfast, break refreshments, and lunch (note that there is no lunch served on Wednesday). It also includes a printed Conference Digest and a Conference Digest on CD. The one-day registration does not include admission to the International Reception. The one-day option can be taken only once during the conference. Payment of workshop registration includes one copy of the Workshop Digest, continental breakfast, Workshop Luncheon and break refreshments. Additional copies of the Workshop Notes may be purchased at $100.00. Registrants may pay by check, money order, bank draft or credit card. Make checks payable in U.S. dollars drawn on a U.S bank to: "GaAs MANTECH, Inc." Your name and address must appear on checks, money order or bank drafts. The only acceptable credit cards are Master Card, VISA, and American Express. REGISTRATION FORMS SENT WITHOUT PAYMENT WILL NOT BE ACCEPTED. All refund requests must be received by Lucky Gold at the convention services office shown below

42 2005 Compound Semiconductor MANTECH

by March 15 for a full refund less a $25 processing fee. NO REFUNDS AFTER March 15. For Advanced Conference Registration, complete the enclosed Registration Form at the end of this Advance Program and return with payment by March 15 to: CS MANTECH Conference c/o Lucky Gold Co. 4126 Crescent Drive St. Louis, MO, USA 63129 Phone: (314) 894-0080 Fax: (314) 894-0450 Email: [email protected] Or register for the conference online at our Web Site at: or


A block of rooms at the Sheraton New Orleans has been reserved for MANTECH participants and their guests. The special MANTECH room rate is $155.00 for single or double occupancy. A 13% tax and $3 per night occupancy tax will be added to these rates. To make a hotel reservation, please register online through our website at: or Or complete the Reservation Form (at the end of this program) and return it directly to: Sheraton New Orleans Reservations Department 500 Canal Street New Orleans, Louisiana 70130 Or FAX the Reservation Form to the Reservations Department at: 504-595-5550. Sheraton

Or Reservations can be made by calling toll free: 1-800325-3535. Please be sure to mention you are a MANTECH attendee. We ask you to please support MANTECH and to more fully enjoy all of the conference activities by staying at our official 2005 location, the Sheraton New Orleans. GaAs MANTECH, Inc. will be penalized if our room block is not filled.

43 2005 Compound Semiconductor MANTECH

Hotel reservations must be received BEFORE March 10, 2005 to qualify for a room under our special rates. The discounted rate is subject to availability. Please MAKE YOUR RESERVATION EARLY! An advance deposit or credit card is required to hold your room. RESERVATIONS RECEIVED AFTER MARCH 10, 2005 WILL BE ACCEPTED ON A SPACE AND RATE AVAILABILITY BASIS. If the group block fills prior to the cut off date, reservations will be accepted based on space and rate availability.


Conference registration will open at the Grand Registration Desk on the fifth floor Sunday night and will be open Monday through Thursday at the following hours: Sunday Monday Tuesday Wednesday Thursday April 10 April 11 April 12 April 13 April 14 6:30 PM 7:00 AM NOON 7:00 AM 7:00 AM 1:00 PM 7:00 AM - 8:30 PM - 10:00 AM - 8:00 PM - 5:30 PM - 11:00 AM - 5:00 PM - 9:00 AM

A Conference Attendee list will be available at the Information Center on Thursday, April 14.


A Conference Message Desk will be in operation at the Registration & Information Center during registration hours. Please advise callers who wish to reach you during the day to ask the hotel operator for the MANTECH Conference Message Desk, or call the message desk direct line at 504-595-5570. Please check the message board periodically.


The Evergreen Room on the fourth floor has been reserved for speaker preparation. This room will be open from 7:00 AM to 5:00 PM on Monday through Thursday, April 1114. The room will be set up with appropriate previewing equipment.

44 2005 Compound Semiconductor MANTECH


Sheraton New Orleans Hotel 500 Canal Street New Orleans, LA 70130 Room Reservations: 1-800-325-3535 General Information: 504-525-2500 General Fax: 504-595-5552 The 2005 MANTECH conference will be held at the Sheraton New Orleans in New Orleans, Louisiana. Located on Canal Street, the hotel is within easy walking access of New Orleans' well-known entertainment spots, including world famous Bourbon Street. Bordering the historic French Quarter, the hotel is just steps from the Mississippi River, the Ernest M. Morial Convention Center and the Warehouse Arts district. Other major attractions in the Hotel's immediate area include the Aquarium of the Americas, the Imax Theater, Harrah's Casino, the Riverwalk Marketplace, and the Louisiana Superdome. The Hotel is located only 16 miles from the New Orleans International Airport. Guests of the Sheraton New Orleans Hotel can also catch a glimpse of the city's world-famous French Quarter, the Warehouse Arts district as well as premier shopping, entertainment and dining venues just outside our front doors. The perfect complement to the city's everlasting mystique, the hotel features 1,110 guest rooms and 53 suites, including nine exclusive Club Level floors with accompanying club lounge, complete with a private bar with attendant and floor-to-ceiling windows offering mesmerizing views of the festive city. Recently renovated, this four-star hotel offers a classic décor that mirrors its Downtown New Orleans home. All guestrooms have been splendidly refurbished in warm, designer earth tones and mahogany furnishings, reminiscent of an historic Garden District home, and all feature the top-of-the-line Sheraton Sweet Sleeper Bed. Custom designed for a great night's sleep, this bed brings the look and feel of home right into each guestroom, with its Sealy Posturepedic plush top mattress, plump pillows, and luxury linens. You can get a first-class workout in a state-of-the-art fitness facility featuring a variety of cardiovascular conditioning and weight training equipment. Open 24 hours and 7 days a week. For more detailed information on the Sheraton New Orleans visit or through the hotel link at For more information on New Orleans activities, visit or

45 2005 Compound Semiconductor MANTECH


In early April, the typical highs are in the lower to mid 70's with lows around 65's. For up-to-the-minute weather information for New Orleans, visit


The Sheraton New Orleans is easily reached in about 20 minutes from the Louis Armstrong International Airport. Taxi: Taxis are available at the airports. Taxi rates from the airport to the Sheraton New Orleans Hotel are approximately $28 for up to 2 persons, $13 each additional person. Shuttles: The Sheraton New Orleans Hotel does not have a courtesy shuttle. However, The Airport Shuttle does operate from the airport. The rate to and from the Sheraton New Orleans is $13 per person. Reservations are only required for return trip.


From the Louis Armstrong International Airport to the Sheraton New Orleans Hotel: From Louis Armstrong International Airport, follow I-10 East to Poydras Street, Exit #234B. Turn left on Camp Street and proceed 3 blocks to Canal Street. The hotel is located on the right corner of Canal and Camp Streets. Turn right onto Canal St. You may enter through the Motor Court by keeping straight on Canal St. and turning right into the Motor Court. The front entrance of the hotel sits on Canal Street. Valet parking is available for guests at $28.00 per night.


MANTECH strongly encourages and supports participation from academic delegates. Students and University Professors seeking financial assistance should contact James Sewell, the 2005 Conference Chair, by email at [email protected]

46 2005 Compound Semiconductor MANTECH

2005 MANTECH Registration Form

Register (use only 1 method) Online at OR Either Fax OR Mail to: GaAs MANTECH, Inc. c/o Lucky Gold Co. 4126 Crescent Drive St. Louis, MO 63129 Phone: (314) 894-0080, Fax: (314) 894-0450 Registration Fees: Includes one printed copy and one CD of the Conference Digest, admission to all sessions, Exhibit Hall, International and Exhibits Receptions, Exhibit Luncheon, Exhibitors' Forum, Interactive Forum Lunch Reception, continental breakfasts and refreshment breaks. (All fees in US$.) EXCEPT FOR STUDENTS, CONFERENCE REGISTRATION FEE DOES NOT INCLUDE WORKSHOP REGISTRATION FEE. Full Early Registration through March 15 .... $525 $_______ Full Registration after March 15................... $625 $_______ One Day Registration* ................................. $300 $_______ Check one: April 12 ____ or April 13 ____ or April 14 ____ Government Registration**.......................... $525 $_______ Student Registration (includes Workshop) ... $125 $_______ Additional Copies of Conference Digest-$140 each $_______ Additional CDs of Conference Digest-$50 each $_______ Additional Tuesday Night International Reception Tickets #______............... $50 each $_______ 2005 Workshop on April 11: Includes one copy of the Workshop Notes, continental breakfast, Workshop Lunch, and break refreshments Workshop Early Reg. through March 15 ...... $275 $_______ Workshop Reg. after March 15..................... $375 $_______ Government Workshop Registration...........$275 $_______ Additional Copies of Workshop Notes-$100 each $_______

Which Workshop stream will you likely attend most?

Processing ___ Networks ___ Business ___ Cellphone ___ 2004 Digest and Workshop Information***: 2004 Conference Digests ... #_____...... $140 each $_______ 2004 Conference CD ......... #_____...... $ 50 each $_______ 2004 Workshop Notes ...... #_____...... $100 each $_______

Total $______

* One-Day Registration can be used only once during the Conference. It includes a copy of the Conference Digest and CD. It does not include admission to the International Reception. ** Must fax proof of government employment if registering after March 15. Not for contractors. *** Visit to order Conference Digests, Workshop Notes, or Workshop Videos for prior years.

Early Conference/Workshop Registration Cutoff Date March 15, 2005

47 2005 Compound Semiconductor MANTECH

Conference Registration Form Continued

Please indicate which special events you plan to attend:

Exhibits Reception (Monday evening) Exhibits Luncheon (Tuesday lunch) International Reception (Tuesday evening) Exhibitors' Forum (Wednesday) Rump Sessions (Wednesday afternoon) Interactive Forum / Ugly Picture Finals (Thursday afternoon) Please TYPE or PRINT clearly:

Name:______________________________________________ Badge Name:________________________________________ Company:___________________________________________ Address:____________________________________________ City: ___________________ State: ______ Zip: ___________ Country: _____________ Phone: _______________________ Fax:__________________ Email:______________________________________________

Payment must accompany registration form. Registration forms sent without payment will not be accepted. Requests for refunds (less $25 processing fee) must be made to address above by Mar. 15. No refunds after Mar. 15, 2005.





Name on Card:___________________________ Card No:________________________________ Exp. Date:_______________________________ Check (payable to "GaAs MANTECH, Inc.")


48 2005 Compound Semiconductor MANTECH

MANTECH Hotel Registration Form

Register (use only 1 method) Online at OR Either Fax OR Mail to:

The Sheraton New Orleans New Orleans, LA

500 Canal Street New Orleans, Louisiana 70130

Phone: 1-800-325-3535 Fax: 1-504-595-5550

Sunday, April 10 through Thursday, April 14, 2005 Please TYPE or PRINT all information clearly.



Address______________________________________________ City___________________ State_________ Zip___________




Arrival Date_____________ Arrival Time_________________

Departure Date___________ Departure Time_______________ Official check-in time is 3:00 pm. Departure time is 12:00 noon. # of rooms _____________ # of guests __________________

Room rate is valid for up to 2 guests/room. Add $25 to room rate for each additional guest over two guests/room.

Hotel Group Rate Cutoff Date ­ March 10, 2005

49 2005 Compound Semiconductor MANTECH

Hotel Registration Form Continued

Non Smoking Single (1 King-sized Bed) Double (2 Full-sized Beds) Smoking $155* + 13% + $3 $155* + 13% + $3

If your requested room and bedding type are not available, an alternate will be assigned. Suites are available starting at $275, but are not covered under the Conference rate. Special Requests_______________________________________ ____________________________________________________ Starwood Preferred Guest Number_____________________

All reservations must be guaranteed with a credit card, or a cash advance. A deposit equal to one night's stay is required to hold each reservation. The deposit is refundable if notice is received at least seventy-two (72) hours prior to arrival and a cancellation number is obtained. One night's room and tax will be charged if cancelled less than 72 hours prior to arrival.

Type of card:

American Express


Diners Club



Cardholder name_______________________________________

Credit Card Number____________________________________

Expiration date________________________________________


Enclosed is a Check/Money Order for $_____________________

Please make check payable to Sheraton New Orleans.

Hotel Group Rate Cutoff Date ­ March 10, 2005

50 2005 Compound Semiconductor MANTECH



Escalator Rampart

phones Ballroom Ballroom




Grand Ballroom Foyer


Ballroom Ballroom


Grand Chenier Grand Couteau Terrace



Rest Rooms


51 2005 Compound Semiconductor MANTECH



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